Abstract:Going down to the limit of ultrathin films holds promise for a new generation of devices such as ferroelectric tunnel junctions or resistive memories. However, these length scales also make the devices sensitive to parasitic effects related to miniaturization, and a better understanding of what happens as size is reduced is of practical importance for the future development of these devices. As the experimental advances in materials preparation and characterization have come together with great progress in theoretical modeling of ferroelectrics, both theorists and experimentalists can finally probe the same length and time scales. This allows realtime feedback between theory and experiment, with new discoveries now routinely made both in the laboratory and on the computer. Throughout this chapter, we will highlight the recent advances in density functional theory based modeling and the role it played in our understanding of ultrathin ferroelectrics. We will begin with a brief introduction to ferroelectricity and ferroelectric oxides, followed by an overview of the major theoretical developments. We will then discuss some of the subtleties of ferroelectricity in perovskite oxides, before turning our attention to the main subject of the chapter -- ferroelectricity in ultrathin films. We will discuss in detail the influence of the mechanical, electrical and chemical boundary conditions on the stability of the polar state in a parallel plate capacitor geometry, introducing the notion of depolarization fields that tend to destabilize ferroelectricity. We will look at other ways in which a thin ferroelectric can preserve its polar state, focusing on ferroelectric domains and domain walls. Finally, we will briefly discuss artificially layered ferroelectrics and the potential they hold as tailor-made materials for electronic applications.

Effect Of Screening And Depolarization In Cylindrical Ferroelectric Capacitor

Impacts of Radius on the Characteristics of Cylindrical Ferroelectric Capacitors

Competing Charge Transfer and Screening Effects in Two-Dimensional Ferroelectric Capacitors

Effect of Electrode on Dielectric Susceptibility and Pyroelectric Properties of a Ferroelectric Thin Film Capacitor Using Landau-Khalatnikov Theory

Interdomain Screening Effect in Multidomain Ferroelectric Thin Film and Its Impact on Polarization Switching

Depolarizing-Field Effect in Strained Nanoscale Ferroelectric Capacitors and Tunnel Junctions

Influence Of Depolarization Field On Polarization States In Epitaxial Ferroelectric Thin Films With Nonequally Biaxial Misfit Strains

Strain engineering of dischargeable energy density of ferroelectric thin-film capacitors

New Understanding of Screen Radius and Re-evaluation of Memory Window in Cylindrical Ferroelectric Capacitor for High-density 1T1C FeRAM

Effect Of Strain And Deadlayer On The Polarization Switching Of Ferroelectric Thin Film

Unravelling and controlling hidden imprint fields in ferroelectric capacitors

Ferroelectricity in ultrathin film capacitors

Systematic Interpretation of Time Effect on Negative Capacitance of Ferroelectrics Based on Electrostatics and Charge Dynamics

Space Charge Effect in Ultrathin Ferroelectric Films

Size And Boundary Effect In Ferroelectric Thin Film For Integrated Passive Components For Rf Communication

Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors

Spontaneous Polarization in an Ultrathin Improper-Ferroelectric/Dielectric Bilayer in a Capacitor Structure at Cryogenic Temperatures

A Carrier-Based Analytic Theory For Electrical Simulation Of Negative Capacitance Surrounding Gate Ferroelectric Capacitor

On the persistence of polar domains in ultrathin ferroelectric capacitors

Calculation of Electric Field in Safety Film Capacitors