High pressure synthesis of antiferromagnetic semiconductor of ZnMnO3

Meiyan Ni,Shoubao Zhang,Shuo Han,Xiaoli Liu,Xuebin Zhu,Hongyan Lu,Shaoshuai Zhou,Hongyan Zhao
DOI: https://doi.org/10.1016/j.physleta.2020.126943
IF: 2.707
2020-01-01
Physics Letters A
Abstract:Ilmenite-type compound ZnMnO3 was synthesized by high temperature and high pressure method. The phase is different from that synthesized at atmospheric pressure, it shows a hexagonal structure with a space group of R-3H (No. 148). Its lattice parameters are a = b = 4.9608(2) angstrom, c = 13.7876(3) angstrom at room temperature. The octahedrons of ZnO6 and MnO6 are stacked layer by layer. The electronic configuration is Zn2+Mn4+O3, where the antiferromagnetic (AFM) interaction between Mn4+ ions induces an AFM transition at 16.2 K. The results of the first principles calculation also indicates ZnMnO3 is a Mn4+ ions dominated AFM insulator with an energy gap of 1.34 eV. (C) 2020 Elsevier B.V. All rights reserved.
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