High-Pressure Synthesis of Polar and Antiferromagnetic Mn 2 MnMoO 6

Shuang Zhao,Jin-Jin Yang,Yi-Feng Han,Mei-Xia Wu,Mark Croft,Peter W. Stephens,David Walker,Martha Greenblatt,Man-Rong Li
DOI: https://doi.org/10.1021/acs.chemmater.1c04357
IF: 10.508
2022-01-31
Chemistry of Materials
Abstract:Polar and magnetic Mn2MnMoO6 with a Ni3TeO6-type structure (R3) was synthesized at 1673 K under 8 GPa. Mn2MnMoO6 shows a large spontaneous polarization of 65.76 μC·cm–2, two magnetic transitions at 19 and 47 K, and a strong magnetic frustration factor (f) of 18.4. The polarization reversal barrier is estimated to be 232 meV. X-ray absorption spectroscopy established Mn22+Mn2+Mo6+O6 formal oxidation states. Theoretical calculations indicate an antiferromagnetic ground state of up–down–up–down–up–down spin alignment for Mn ions and a semiconductor characteristic with a band gap around 1.06 eV. Magnetism-dependent dielectric responses show no magnetodielectric and electric coupling, which is attributed to the high polarization reversal barrier and grain boundary effects.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.chemmater.1c04357.Comparison of total candidate magnetic ground-state energies and the magnetic structure for Mn2MnMoO6 (Figures S1 and S2); crystallographic parameters of Mn2MnMoO6 (Tables S1 and S2) (PDF)Crystallographic information file for Mn2MnMoO6 (CIF)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical
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