Abstract:The present work reports the structural and electrical properties of Mg (1− x ) Zn x O ( x = 0, 0.05, 0.10) synthesized using the solid-state reaction technique. X-ray diffraction profiles display single-phase rock salt cubic crystalline structure with space group Fm-3 m in all the samples. The polycrystalline nature of Mg (1− x ) Zn x O solid solutions has been corroborated by XRD and SEM analysis. EDS provides the elemental composition of the samples. FTIR analysis endorses a single phase in all samples due to the characteristic vibrational modes of Mg–O bonds. UV–Vis spectra reveal an increase in bandgap (4.12–4.48 eV) with increasing dopant concentration. A comprehensive analysis of dielectric investigation, conducted over a wide range of frequencies (1 kHz–1 MHz) and temperatures (523–723 K), has been done. Remarkably small dielectric loss and large dielectric constant of these engineered materials offer myriad opportunities for enhancing performance and energy storage in electronic and optoelectronic devices. The activation energies estimated from Arrhenius plots propose the conduction charge carriers to be extrinsic. The plot of frequency coefficient ( s ) with temperature suggests a crossover of the conduction mechanism from small polaron hopping at low temperatures to correlated barrier hopping mechanism at high temperatures. This crossover is found to be shifting towards higher temperatures with an increase in dopant concentration. The inclusive knowledge regarding the temperature-dependent conduction behavior of these synthesized high-k materials suggests their potential for high-temperature applications.

Synthesis of Mg X Zn 1- X O under High Pressure and High Temperature

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