A 2.5D Integrated L Band Receiver Based on High Resistivity Si Interposer
Shenglin Ma,Yuan Chai,Jun Yan,Han Cai,Liulin Hu,Shuwei He,Wei Wang,Jing Chen,Yufeng Jin
DOI: https://doi.org/10.1109/cicta.2018.8705960
2018-01-01
Abstract:Transmitter/Receiver (T/R) is a basic part for the RF front-end module, whose miniaturization and integration are very important for the improvement in integration density, function complexity and performance. The state of art of high performance T/R is mainly realized with heterogeneous integration based on advance ceramics such as High Temperature Co-fired Ceramic (HTCC) and Low Temperature Co-fired Ceramic (LTCC). This scheme is helpful to fully utilize the excellent performance of various devices based on substrate such as GaAs, InP, and GaN substrate, however, it confronts shortcomings in re-wiring lines of low precision, shrinkage mismatch during co-firing process, low thermal conductivity. TSV interposer having its Re-wiring line realized with IC back-end metallization process, MEMS process, etc., and using Through-Silicon-Via (TSV) to achieve vertical interconnections between rewiring lines on both surface, is able to provide a good match in rewiring line with RF microelectronic chips, factoring in improvement in RF loss properties with high-resistivity Si as substrate instead of normal low resistivity Si, therefore is acknowledged to be a competitive package substrate for building a highly integrated RF system. In this context, we present a 2.5D integrated L-band Receiver based on TSV interposer, the test results prove the feasibility of 2.5D RF integration enabled by high-resistivity Si interposer.