A 2.85mm 2 RF Transceiver in 40nm CMOS for IoT Micro-Hub Applications
Dong Wang,Zexue Liu,Yi Tan,Chen Xu,Heyi Li,Haoyun Jiang,Xinyu Bao,Yixiao Wang,Junhua Liu,Huailin Liao
DOI: https://doi.org/10.1109/a-sscc53895.2021.9634837
2021-01-01
Abstract:With the development of wireless communication and Internet-of-Things (IoT), many new communication protocol standards have emerged. IoT micro-hub, which acts as the bridge between ubiquitously deployed IoT terminals and the Internet, is becoming a critical part of IoT [1]. RF transceivers for IoT micro-hub applications are now facing several technical challenges. Firstly, they should be highly re-configurable and flexible to be compatible with a variety of IoT communication protocols. In addition, for long communication distance and complex communication scenarios, there also exists demand to integrate an on-chip power amplifier (PA) into the RF transceiver to reduce cost. Secondly, the number of IoT micro-hubs has increased dramatically with the development of IoT. For lower cost and longer lifetime, there is strong demand to reduce power consumption and chip area of these RF transceivers. A possible solution for IoT micro-hub applications is the software-defined-radio (SDR) transceivers [2]–[4]. However, the high power consumption and large chip area make them not suitable for IoT micro-hub applications. A 0.1-4GHz receiver and 0.1-6GHz transmitter for SDR applications is proposed in [2], but the carrier frequency of receiver is limited to 0.1-4GHz and the noise Figure (NF) is 3-8dB. Though not integrating a phase-locked loop (PLL) or a PA, the chip occupies $8.12\mathrm{mm}^{2}$. A multi-standard transceiver is proposed in [4], in which four parallel low noise amplifiers (LNAs) with several inductors are used in the receiver to cover 0.1-6GHz band, which occupy considerable chip area.