Influence of the Selenization Time on the Properties of (na0.1cu0.9)2znsn(s,se)4 Thin Films and Their Photovoltaic Solar Cells

Yingrui Sui,Dongyue Jiang,Yanjie Wu,Wenjie He,Fancong Zeng,Zhanwu Wang,Fengyou Wang,Bin Yao,Lili Yang
DOI: https://doi.org/10.1016/j.ceramint.2020.09.141
IF: 5.532
2020-01-01
Ceramics International
Abstract:(Na0.1Cu0.9)(2)ZnSn(S,Se)(4) thin films with a single kesterite phase were synthesized using a sol-gel spin-coating method accompanied by rapid post-annealing. In this study, we investigated the effect of selenization time on the crystal quality and photoelectric performance of the (Na0.1Cu0.9)(2)ZnSn(S,Se)(4) films. It was found that the crystallinity and morphology of the films was enhanced, and some of bigger Se substituted for the S site in (Na0.1Cu0.9)(2)ZnSn(S,Se)(4) with increasing the selenization time. The bandgap of the film can be regulated from 1.04 eV to 0.99 eV by varying the selenization time. In addition, all films showed p-type conductive characteristics, and films with optimal electrical performance could be obtained by optimizing the selenization time. Finally, the (Na0.1Cu0.9)(2)ZnSn(S,Se)(4) thin film with the best crystal quality and optical-electrical characteristics was obtained at an optimized selenization time of 15 min. A high power conversion efficiency (PCE) of 3.92% was obtained for the (Na0.1Cu0.9)(2)ZnSn(S,Se)(4) device, which is 42% higher compared to that of the undoped Cu2ZnSn(S,Se)(4) (CZTSSe) device.
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