Abstract:An outstanding‐performance ultraviolet‐B light‐emitting diode (UVB‐LED) with peak wavelength at 303.6 nm is achieved by adopting a substrate‐dominated strain‐modulation strategy on nano‐patterned sapphire substrate. The remarkable UVB‐LED simultaneously shows a high light output power, a low operating voltage, and a long‐time reliability, which will accelerate the applications of AlGaN‐based UVB‐LEDs to a large extent. AlGaN‐based ultraviolet‐B light‐emitting diodes (UVB‐LEDs) exhibit great potential in phototherapy, vitamin D3 synthesis promotion, plant growth regulation, and so on. However, subjected to the excess compressive strain induced by the large lattice mismatch between multiple quantum wells (MQWs) and AlN, UVB‐LEDs that simultaneously satisfy the requirements of high light output power (LOP), low working voltage, and excellent stability are rarely reported. Here, a substrate‐dominated strain‐modulation strategy is proposed. By precisely manipulating the strain in AlN grown on nano‐patterned sapphire substrate (NPSS) to a slightly tensile one, the compressive strain in the following Al0.55Ga0.45N underlayer and Al0.28Ga0.72N/Al0.45Ga0.55N MQWs is successfully suppressed. As a result, an outstanding UVB‐LED with a peak wavelength at 303.6 nm is achieved. The 20 × 20 mil2 UVB‐LED chip shows a wall‐plug efficiency (WPE) of 3.27% under a forward current of 20 mA and a high LOP of 57.2 mW with an extremely low voltage of 5.87 V under a forward current of 800 mA. It is more exciting that the LOP degradation is as low as 17% after 1000 h operation under a forward current density of 75 A cm−2, showing excellent stability. The here‐developed UVB‐LED, with a high LOP and excellent reliability, will definitely promote the applications of AlGaN‐based UVB‐LEDs.

Boosted Performance of Ultraviolet Light-Emitting Diodes via Wavy Quantum Wells Grown on Large Misoriented Sapphire Substrate

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

Paving the Way for High‐Performance UVB‐LEDs Through Substrate‐Dominated Strain‐Modulation

282-Nm Algan-Based Deep Ultraviolet Light-Emitting Diodes with Improved Performance on Nano-Patterned Sapphire Substrates

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

Light Extraction Enhancement of AlGaN-based Ultraviolet Light-Emitting Diodes by Substrate Sidewall Roughening

High Internal Quantum Efficiency ZnO/ZnMgO Multiple Quantum Wells Prepared on GaN/sapphire Templates for Ultraviolet Light Emitting Diodes

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Stimulated Emission At 340 Nm From Algan Multiple Quantum Well Grown Using High Temperature Aln Buffer Technologies On Sapphire

Efficient Deep Ultraviolet Emission from Self-Organized AlGaN Quantum Wire Array Grown on Ultrathin Step-bunched AlN Templates

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates

Efficiency improvement analysis of nano-patterned sapphire substrates and semi-transparent superlattice contact layer in UVC light-emitting diodes

Growth of high-quality near-ultraviolet light-emitting diodes used InGaN/GaN multiple quantum wells

High Efficiency Single Ag Nanowire/p-Gan Substrate Schottky Junction-Based Ultraviolet Light Emitting Diodes

Improved Wave Function Overlap and Carrier Confinement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Graded Composition Multiple Quantum Wells

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via asymmetric step-like AlGaN quantum wells

Advantages of AlGaN-based Deep-Ultraviolet Light-Emitting Diodes with an Al-composition Graded Quantum Barrier.

High efficiency deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range