Boosted Performance of Ultraviolet Light-Emitting Diodes via Wavy Quantum Wells Grown on Large Misoriented Sapphire Substrate

Haiding Sun
DOI: https://doi.org/10.1364/CLEO_AT.2020.AF1I.4
2020-01-01
Abstract:High quality Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> N/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-y</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> N multiple quantum wells (MQWs) with sharp interfaces and emitting at ~280 nm was successfully grown on sapphire substrate with a misorientation angle as large as 4°. Wavy MQWs are observed due to step bunching formed at the step edges of the highly misoriented substrate. A significantly enhanced photoluminescence intensity (at least 10 times higher), improved internal quantum efficiency over 90%, and a much longer carrier lifetime were achieved for QWs grown on 4° misoriented sapphire substrate when compared with that grown on 0.2° misoriented sapphire. Importantly, the wafer-level output power of the ultraviolet light emitting diodes on 4° misoriented sapphire substrate were nearly doubled. The compositional modulation in active region arising from the substrate misorientation provides a promising approach in the pursuit of future high-efficient UV emitters.
What problem does this paper attempt to address?