Abstract:The demand for polished silicon wafers has increased significantly in recent years to cater to the development of the semiconductor industry. For example, polished silicon wafer has direct applications in integrated circuits, radio frequency amplifiers, micro-processors, micro-electromechanical systems, etc. To carry out mechanical polishing, lapping, grinding, or single-point diamond turning of silicon, diamond abrasives were extensively used before the implementation of chemo-mechanical polishing. During the diamond-based polishing, a few problems have already been identified, such as the formation of an amorphous phase, heat-affected zones, low material removal, etc. Some research work has also reported that nano-structured abrasives lead to a thin layer of the amorphous phase and a better material removal rate. In the same direction, a molecular dynamics simulation is carried out in this paper to investigate the mechanism of material removal from monocrystalline silicon during the diamond-abrasive-based polishing process. The present work is mainly focused on the dynamics of material removal phenomena near the abrasive particles at the nanometric scale by considering stress, lattice, cohesive energy, etc. This reveals that a higher value of indentation force results in surface buckling, which creates a zone of both compressive and tensile stresses, which increases the coordination number and forms β-silicon just ahead of the abrasive particle. This mechanism happens by developing a β-silicon phase on the surface with a thickness beyond a certain value of indentation force on the zone of compression. Buckling on this phase happens due to stress localisation in compression, as the flow stress of this phase is less than that of diamond cubic lattices. To avoid the mechanism of surface buckling and process silicon material on the surface, the indentation force needs to be maintained below a critical value. In the present case, it was found that the indentation force of less than or equal to 190 nN for the abrasive size of φ8 nm does the material removal by surface processing only without surface buckling. It was also found that surface processing helps to reduce the depth of the amorphous layer significantly without compromising the material removal rate or the generation of a wavy surface. Thus, the present mechanism will help in the polishing of silicon with minimum defects and reduce processing time for the final stage of polishing towards manufacturing ultra-smooth and planer surfaces.

Evolution of Nano-Cracks in Single-Crystal Silicon During Ultraprecision Mechanical Polishing

Mechanism of crack evolution in nano-indentation of single crystal silicon by atomistic simulations and theoretical analysis

Molecular dynamics simulation of nano-polishing of single crystal silicon on non-continuous surface

Investigation on mechanism of ultraprecision three-body polishing of single-crystal silicon carbide with voids by molecular dynamics simulation

Nano-grinding Process of Single-Crystal Silicon Using Molecular Dynamics Simulation: Nano-grinding Parameters Effect

Phase-field-crystal Simulation of Nano-Single Crystal Microcrack Propagation under Different Orientation Angles

Molecular dynamics study of crystal orientation effect on surface generation mechanism of single-crystal silicon during the nano-grinding process

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Investigate on Material Removal of 3C-Sic Crystals in Nano-Polishing Via Molecular Dynamics

Origin and Evolution of a Crack in Silicon Induced by a Single Grain Grinding

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

Effects of Anisotropy on Single Crystal Silicon in Polishing Non-Continuous Surface

Molecular dynamics simulation of subsurface damage mechanism during nanoscratching of single crystal silicon

Molecular Simulation of the Plastic Deformation and Crack Formation in Single Grit Grinding of 4H-Sic Single Crystal

Scratch Evolution for Monocrystalline Silicon During Chemical- Mechanical Polishing

The Removal Mechanism of Monocrystalline Si in the Process of Double Diamond Abrasive Polishing by Molecular Dynamics Simulation

Sub-Nano Depth Scratches on Various Crystal Surfaces During Chemical Mechanical Polishing

Microscopic Stress Analysis of Nanoscratch Induced Sub-Surface Defects in a Single-Crystal Silicon Wafer

Surface Topography and Subsurface Structure Evolution in Laser Micro Polishing of Monocrystalline Silicon

Molecular simulation of ultrasonic assisted diamond grit scratching 4H-SiC single-crystal

Mechanism of surface modification on monocrystalline silicon during diamond polishing at nanometric scale