Abstract:We irradiate the single crystal boron-doped silicon (Si) at various laser fluences with 100 laser shots in ambient air at room temperature using an Nd:YAG laser and investigate its surface morphology and optical properties. The optical microscopy gives evidence of the formation of a crater and reveals that the heat-affected zone and melted area are increased with increase in laser fluence from 1.1 to 15.4 J/cm2. The micrographs obtained by scanning electron microscopy (SEM) show that the micro- and nano-structures such as microcracks, bubbles, nucleation sites, clusters, redeposited layered material, nanoparticles, and alike water droplet structures are formed on a laser-exposed Si surface. The optical profilometry of the irradiated Si further confirms the ablation and redeposition of the material and shows that the depth of the crater is increased from 12.1 to 15.2 μm with increase in fluence from 1.1 to 15.4 J/cm2. Raman spectroscopy of the samples shows that the irradiation generates anneal effects due to higher temperature, which increases the crystallinity of the Si. The ellipsometric analysis shows that the irradiation of Si with increasing laser fluence changes its optical constants (refractive index and extinction coefficient), which further influence its optical properties, e.g., reflectivity, absorptivity, and energy bandgap. The absorptivity of laser irradiated Si tends to increase with increasing laser fluence, and the energy bandgap is decreased accordingly due to increase in structural disorders. Our study shows that the controlled laser irradiation can tune the energy bandgap of exposed Si, and it makes the Si materials useful for the fabrication of optoelectronic devices such as solar cells, photovoltaic cells, and LEDs.

Properties investigation of crystalline silicon surface irradiated by nanosecond laser pulses in different background atmospheres

Infrared Photodiode of Textured Silicon Irradiated under Mixed Gas by Femtosecond Laser

Direct fabrication of black Si with enhanced infrared transmittance using femtosecond laser irradiation

Fabrication of Black Silicon with Thermostable Infrared Absorption by Femtosecond Laser

Comparison of Different Etching Methods on the Morphology and Semiconductor Characters of Black Silicon

Optical properties of black silicon prepared by wet etching

Direct and Stand-off Fabrication of Black Silicon with Enhanced Absorbance in the Short-Wavelength Infrared Region Using Femtosecond Laser Filament

Investigations on Surface Morphology and Bandgap Engineering of Single Crystal Boron-Doped Silicon Irradiated by a Nanosecond Laser.

Formation and Evolution of Black Silicon Microcolumns with Array Distribution after IR Nanosecond-Pulsed Laser Ablation

Sub-bandgap Photo-Response of Non-Doped Black-Silicon Fabricated by Nanosecond Laser Irradiation.

Black Silicon IR Photodiode Supersaturated with Nitrogen by Femtosecond Laser Irradiation

Large-Scale Black Silicon Induced by Femtosecond Laser Assisted With Laser Cleaning

Femtosecond Laser Fabricating Black Silicon in Alkaline Solution

Ultrafast Laser-Induced Black Silicon, from Micro-Nanostructuring, Infrared Absorption Mechanism, to High Performance Detecting Devices

Electronic States of Nanocrystal Doped with Oxygen and Visible Emission on Black Silicon Prepared by Ns-Laser

Large-Scale Wideband Light-Trapping Black Silicon Textured by Laser Inducing Assisted with Laser Cleaning in Ambient Air

Effect of Thermal Annealing on Sub-Band-gap Absorptance of Microstructured Silicon in Air

Multipulse Nanosecond Laser Irradiation of Silicon for the Investigation of Surface Morphology and Photoelectric Properties

Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon

Black Silicon Created by Interfered Femtosecond Laser Illumination

Optically Induced Abnormal Terahertz Absorption in Black Silicon