Abstract:Aspheric thin-walled crucibles with large diameters are widely used for photovoltaics and semiconductor industries, while they have hard-brittle and aspheric characteristics. Nevertheless, these crucibles strictly require atomic surfaces and high material removal rate (MRR). This is a challenge for chemical mechanical polishing (CMP). To break this challenge, a novel green CMP was developed for fused silica, containing ceria, lanthana, hydrogen peroxide, diethylene triaminepentaacetic acid pentasodium, carboxymethyl cellulose sodium and guanidine carbonate. After CMP, surface roughness Ra of 0.115 is obtained at a scanning area of 5 × 5 μm2 measured by atomic force microscopy, and MRR is 563 nm/min. In such an atomic surface, the MRR is the highest compared with those published previously. Transmission electron microscopy confirms that the thickness of damaged layer after CMP is only 2.63 nm. A novel approach of robot floating polishing is proposed for aspheric crucibles with a diameter of 810 mm and a height of 580 mm. Using the developed CMP, surface roughness Sa of 0.178 nm on inner surface of an aspheric thin-walled crucible is achieved under a measurement area of 50 × 50 μm2. X-ray photoelectron spectroscopy (XPS) and electron paramagnetic resonance reveal that the content of Ce3+ increased from 28.54 to 43.76 %. Through Raman, XPS and Fourier transform infrared spectroscopy, CMP mechanisms are elucidated. Densified damaged layer on the surface of fused silica was induced by the transformation of surface structure from six-membered to four- or three-membered network. Ce-OH and Si-OH were formed between fused silica and ceria abrasives, forming Ce-O-Si by condensation reaction of dehydration. The developed green CMP and approach provide new pathway to polish and manufacture atomic surfaces for aspheric thin-walled crucibles with large diameters.

CHEMICAL MECHANICAL POLISHING AND ITS MECHANISM ON YTTERBIUM-DOPED MIXED SESQUIOXIDES (Yb:Lusco3)

Trivalent lanthanum and ytterbium doped meso-silica/ceria abrasive systems toward chemical mechanical polishing (CMP) and ultraviolet irradiation-assisted photochemical mechanical polishing (PCMP)

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Mechanism of polishing lutetium oxide single crystals with polyhedral diamond abrasive grains based on molecular dynamics simulation

Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

Mechanism and Applications of Chemical and Mechanical Polishing

RE (la, Nd and Yb) Doped CeO2 Abrasive Particles for Chemical Mechanical Polishing of Dielectric Materials: Experimental and Computational Analysis

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Chemical mechanical polishing: Theory and experiment

A New Chemical-Mechanical Polishing Method Based On Colloids Silica and MgO Was Developed For Polishing Y3Al5O12 Material

AFM and XPS Studies on Material Removal Mechanism of Sapphire Wafer During Chemical Mechanical Polishing (CMP)

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Progress in Material Removal Mechanisms of Surface Polishing with Ultra Precision

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing

Atomic surface induced by novel green chemical mechanical polishing for aspheric thin-walled crucibles with large diameters

The Deterioration Characteristics and Mechanism of Polishing Pads in Chemical Mechanical Polishing of Fused Silica

A special electrostatic self-assembly structure of colloidal silica: Improving Chemical Mechanical Polishing performance

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Study on Chemical Mechanical Polishing Performances of Sapphire Wafer (0001) Using Silica-Based Slurry

Atomistic Insights into Cu Chemical Mechanical Polishing Mechanism in Aqueous Hydrogen Peroxide and Glycine: ReaxFF Reactive Molecular Dynamics Simulations

Mechanism of Surface Defects in Ultra-Precision Machining of Sesquioxide Laser Crystal Tm: GdScO3