Abstract:1T1R spin-transfer-torque (STT) MRAM is a promising candidate for next-generation high-density embedded non-volatile memory [1-2]. However, 1T1R STT-MRAM suffers from limited sensing margin and high write power. As shown in Fig. 30.2.1(a), sense amplifier design is challenging due to the small difference (only 2x) between the high-resistance state (R AP ) and the low-resistance state (R P ), as well as R AP degradation with increasing temperature. Moreover, R P and R AP resistance distributions shift with process variation, requiring a read reference (V ref ) that tracks process. To improve the sensing margin, several offset-cancellation methods have been reported to reduce sense amplifier mismatch [3]. However, these methods use multiple capacitors and hence incur significant area overheads. To address this issue, we propose an offset-cancelled sense amplifier that uses only a single capacitor to significantly improve the sensing margin by more than 60%. A second design challenge for STT-MRAM stems from the high current needed to flip a cell during a write operation. For non-volatile memory applications with a 10-year retention time requirement, the write current can be as high as several hundred μA. However, as shown in Fig. 30.2.1(b), the required write time varies with the state change required (0→1 or 1→0), process variation, and temperature. As a result, a fixed write time that ensures successful write for all conditions wastes a significant energy for typical or average conditions. We propose an in situ write-self-termination method to reduce write energy in most scenarios. The sense amplifier is reconfigured to continuously monitor the write operation and automatically shuts off the write drivers when the state transition is detected, without an area or timing penalty. In addition, dual dummy columns are added in each array to provide read V ref tracking of row-wise PVT variation. A 1Mb STT-MRAM was fabricated in 28nm technology, and achieves a 2.8ns read-access time at 25°C and 3.6ns at 120°C, respectively. With in-situ self-write-termination the write power is reduced by 47% with a 20ns write-access time at 25°C and by 60% at 120°C.

CSME: A Novel Cycle-Sensing Margin Enhancement Scheme for High Yield STT-MRAM

Investigation of PVT-Aware STT-MRAM Sensing Circuits for Low-VDD Scenario

Data-cell-variation-tolerant triple sampling non-destructive self-reference sensing scheme of STT-MRAM

Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM

Design Techniques to Improve the Device Write Margin for MRAM-based Cache Memory

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

A 1-Mb 28-Nm 1T1MTJ STT-MRAM with Single-Cap Offset-Cancelled Sense Amplifier and in Situ Self-Write-Termination

Architectural Exploration to Enable Sufficient MTJ Device Write Margin for STT-RAM Based Cache

Complementary-Magnetization-Switching Perpendicular Spin-Orbit Torque Random-Access Memory Cell for High Read Performance

Dynamic Time-Domain Sensing Scheme for Spin-Orbit Torque MRAM

Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application

Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing

A Novel Group-Division-Multiplexing Complementary Symmetric Reference Sensing Scheme for MRAM

A 1mb 28nm Stt-Mram With 2.8ns Read Access Time At 1.2v Vdd Using Single-Cap Offset-Cancelled Sense Amplifier And In-Situ Self-Write-Termination

Reliability-Improved Read Circuit and Self-Terminating Write Circuit for STT-MRAM in 16 nm FinFET

Low-Energy Shared-Current Write Schemes for Voltage-Controlled Spin-Orbit-Torque Memory

Optimization Scheme to Minimize Reference Resistance Distribution of Spin-Transfer-Torque MRAM

Spin-hall Assisted STT-RAM Design and Discussion

High Speed, Low Resource and Non-volatile MTJ-CMOS Hybrid Logical Circuits

The Write Deduplication Mechanism Based On A Novel Low-Power Data Latched Sense Amplifier For A Magnetic Tunnel Junction Based Non-Volatile Memory

Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM