High Performance Nitrogen Dioxide Sensor Based on Organic Thin-Film Transistor Utilizing P3HT/OH-MWCNTs Blend Film

Shixiong Zhao,Sihui Hou,Huidong Fan,Zijun Wang,Junsheng Yu
DOI: https://doi.org/10.1016/j.synthmet.2020.116569
IF: 4
2020-01-01
Synthetic Metals
Abstract:Organic thin-film transistor (OTFT) based nitrogen dioxide (NO2) gas sensors were fabricated by utilizing blend film as active layer, which was composed by poly (3-hexylthiophene-2,5-diyl) (P3HT) and hydroxylated multi-walled carbon nanotubes (OH-MWCNTs). By optimizing the blend ratios (P3HT/OH-MWCNTs), the sensitivity of OTFTs to 30 ppm NO2 is up to 1320 %, while the pristine P3HT device is only 96 %, realizing a ca. 10 times enhancement. The OTFTs with P3HT/OH-MWCNTs blend active layer also exhibit excellent selectivity for NO2 against CO, NH3 and. H2S. By investigating the morphologies and microstructures of blend films via atomic force microscope, optical microscopy and UV-vis spectrophotometer, the improvement of sensing performance was mainly attributed to more gaps between the P3HT aggregations with the introduction of OH-MWCNTs, which was beneficial to the diffusion and adsorption of NO2. This work demonstrates that OH-MWCNTs can be applied in the field of OTFT by simple solution method for realizing high sensing performance gas sensor.
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