Organic Thin‐Film Transistors: UV–Ozone Interfacial Modification in Organic Transistors for High‐Sensitivity NO2 Detection (adv. Mater. 31/2017)

Wei Huang,Xinming Zhuang,Ferdinand S. Melkonyan,Binghao Wang,Li Zeng,Gang Wang,Shijiao Han,Michael J. Bedzyk,Junsheng Yu,Tobin J. Marks,Antonio Facchetti
DOI: https://doi.org/10.1002/adma.201770226
IF: 29.4
2017-01-01
Advanced Materials
Abstract:Ultra-sensitive OTFT-based NO2 gas sensors implementing a simple, low-cost UV/ozone (UVO) activation of the TFT gate dielectric layer are fabricated, as discussed in article number 1701706 by Junsheng Yu, Tobin J. Marks, Antonio Facchetti and co-workers. UVO generates oxygen-containing functional groups which strongly bind the NO2 molecules, which contributes to limit of detection of ≈400 ppb, and sensitivity approaches ≈200% and ≈160 000% for NO2 concentrations of 1 ppm and 30 ppm, respectively.
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