Phase separation of P3HT/PMMA blend film formed semiconducting and dielectric layers in organic thin-film transistors for high sensitivity NO2 detection.

Sihui Hou,Junsheng Yu,Xinming Zhuang,Dengfeng Li,Yiming Liu,Zhan Gao,Tianying Sun,Feng Wang,Xinge Yu
DOI: https://doi.org/10.1021/acsami.9b15651
IF: 9.5
2019-01-01
ACS Applied Materials & Interfaces
Abstract:Formation of the semiconductor/dielectric double-layered films via vertical phase separations from polymer blends is a simple and effective method to fabricate organic thin-film transistor (OTFTs). Here we report a simple one step processing method for vertical phase separation of the poly(3-hexylthiophene-2,5-diyl) (P3HT) and Poly(methyl methacrylate) (PMMA) blends in OTFTs and their applications for high performance nitrogen dioxide (NO2) gas sensors. Comparing to the conventional two steps coated OTFT sensors, the one step developed devices exhibit a remarkable enhancement of the gas responsivity from 116% to 1481% for 30 ppm NO2 concentration, and a limit of detection of  0.7 ppb. By analyzing the microstructures of the blend films and the electrical characteristics of the OTFT sensors, it was found that the one step vertical phase separation formed devices have better capability for the adsorption of NO2 molecules. Moreover, carefully adjusting the blend ratio between P3HT and PMMA can further improve the sensitivity of the NO2 sensors, and exhibit great selectivity and ability of recovery. This simple one step processing method demonstrates a bright future for developing high performance, low-cost and large area OTFT gas sensors.
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