Abstract:The CZTS/ZnO0.375S0.625 interface has less harmful interface state, small conduction band offset and band bending. Moreover, its band alignment belongs to the staggered Type‐II heterojunction, and its built‐in electric field is in the same direction as the carrier migration, which is very favorable for the efficient separation and fast transfer of photogenerated carriers. The current low conversion efficiency of Cu2ZnSnS4 (CZTS)‐based thin film solar cells is mainly blamed on the high carrier recombination via interface states at the absorber‐buffer. In this work, ZnO1−xSx solid solution is exploited as the potential buffer layer materials to solve this issue by using density functional theory calculations. With the varying of solid solubility, the lattice constant of ZnO1−xSx solid solution follows the first‐order Vegard's Law, while its bandgap follows the second‐order Vegard's Law. Based on the systematical analysis of crystal structure and electronic properties of ZnO1−xSx solid solution, ZnO0.375S0.625 is screened as the optimal buffer layer material for CZTS‐based thin film solar cells, owing to the suitable bandgap (2.33 eV) and the smallest lattice mismatch (<7%). The CZTS/ZnO0.375S0.625 interface has less harmful interface state, small conduction band offset (−0.02 eV) and band bending (−0.23 eV). Moreover, its band alignment belongs to the staggered Type‐II heterojunction, and its built‐in electric field is in the same direction as the carrier migration, which is very favorable for the efficient separation and fast transfer of photogenerated carriers. Therefore, these interface features and effects of CZTS/ZnO0.375S0.625 heterojunction can significantly boost the photovoltaic performance of CZTS‐based thin film solar cells.

Forming an Ultrathin SnS Layer on Cu 2 ZnSnS 4 Surface to Achieve Highly Efficient Solar Cells with Zn(O,S) Buffer

Sputtering Deposited and Energy Band Matched ZnSnN2 Buffer Layers for Highly Efficient Cd‐Free Cu2ZnSnS4 Solar Cells

Ald Znsno Buffer Layer For Enhancing Heterojunction Interface Quality Of Czts Solar Cells

Restraining the Band Fluctuation of CBD-Zn(O,S) Layer: Modifying the Hetero-Junction Interface for High Performance Cu2ZnSnSe4 Solar Cells with Cd-Free Buffer Layer

Low-cost Fabrication of Cu 2 ZnSnS 4 Thin Films for Solar Cell Absorber Layers

A Sputtered CdS Buffer Layer for Co-Electrodeposited Cu2ZnSnS4 Solar Cells with 6.6% Efficiency.

Efficiency Enhancement of Kesterite Cu2ZnSnS4 Solar Cells Via Solution-Processed Ultrathin Tin Oxide Intermediate Layer at Absorber/Buffer Interface

Self-assembled Nanometer-Scale ZnS Structure at the CZTS/ZnCdS Heterointerface for High-Efficiency Wide Band Gap Cu2ZnSnS4 Solar Cells

Promising Cd-free double buffer layer in CZTSSe thin film solar cells

Enhanced Heterojunction Interface Quality to Achieve 9.3% Efficient Cd-Free Cu2ZnSnS4 Solar Cells Using Atomic Layer Deposition ZnSnO Buffer Layer

ZnO1−xSx Solid Solution as Potential Buffer Layer Materials for Cu2ZnSnS4‐Based Thin Film Solar Cells: Structural and Interfacial Properties

Solution-processed Ultrathin SnO2 Passivation of Absorber/Buffer Heterointerface and Grain Boundaries for High Efficiency Kesterite Cu2ZnSnS4 Solar Cells

Optimization of Zn1–xSnxO Buffer Layer for Application in CZTSe Solar Cells with H2‐Assisted Reactive Sputtering

Analysis of Effect of Zn(O,S) Buffer Layer Properties on CZTS Solar Cell Performance Using AMPS

All-Layer Sputtering-Free Cu2Zn1-xCdxSnS4 Solar Cell with Efficiency Exceeding 7.5%

7.1% Efficient Co-Electroplated Cu2ZnSnS4 Thin Film Solar Cells with Sputtered CdS Buffer Layers

Co-electrodeposited Cu2ZnSnS4 thin-film solar cells with over 7% efficiency fabricated via fine-tuning of the Zn content in absorber layers

Over 9% Efficient Kesterite Cu2ZnSnS4 Solar Cell Fabricated by Using Zn1–xCdxS Buffer Layer

Restraining the Band Fluctuation of CBD-Zn(O,S) Layer: Modifying the Hetero-Junction Interface for High Performance Cu2 ZnSnSe4 Solar Cells With Cd-Free Buffer Layer (Solar RRL 10∕2017)

An Alternative Route Towards Low-Cost Cu2ZnSnS4 Thin Film Solar Cells

Optimizing the Thickness of Sputtering-Zn(o, S) Buffer Layer for All-Dry Cd-free CIGS Solar Cells