Abstract:The integration of on-chip temperature sensors within various systems, industrial Internet of Things (IoT), and wireless sensor networks is greatly facilitated by their small size, cost-effectiveness, and capability to provide direct digital output. However, the diverse application scenarios pose challenges in designing these sensors. On one hand, real-time clock calibration demands high-precision temperature sensors, while on-chip heat management emphasizes compactness and low-voltage operation. Additionally, streamlining the calibration cost for mass production holds significant practical value. Addressing these challenges, this study systematically investigates on-chip complementary metal-oxide-semiconductor (CMOS) temperature sensors based on distinct signal domains processed by temperature readout circuits. Specifically, the research commences by analyzing the issues of several degeneracy points in the front-end circuit of a bipolar junction transistor (BJT) temperature sensor with current gain compensation technology. To address the intricate design challenges in advanced technologies and calibration complexities in industrial applications, dynamic component matching, current gain compensation, and chopper stabilization are harnessed. A novel dynamic current gain canceling technique for temperature readout is introduced, enhancing temperature measurement accuracy without incurring additional power consumption or area overhead. Ultimately, an all-digital CMOS temperature sensor is realized using the SMIC 55 nm CMOS process. Occupying a mere 0.29 mm2 of core area, the design operates efficiently across a wide supply voltage range of 1.2 V to 3.6 V. Covering a temperature spectrum from −40 °C to 125 °C, the sensor demonstrates a calibration error of just ±0.7 °C. This achievement is attributed to the incorporation of the proposed dynamic current gain compensation technique.

Sub‐nanoampere‐sensitivity Current Comparatorbased Temperature Sensor with Bucket Searching Algorithm

An Untrimmed BJT-Based Temperature Sensor with Dynamic Current-Gain Compensation in 55-Nm CMOS Process

A CMOS Temperature Sensor with Versatile Readout Scheme and High Accuracy for Multi-Sensor Systems

An All-Digital CMOS Temperature Sensor with a Wide Supply Voltage Range.

A 0.26-Pj·k2 2400-Μm2 Digital Temperature Sensor in 55-Nm CMOS

A 0.8V Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.4°C ($\mathbf{3}\mathbf{\sigma}$) from −40°C to 125°C in 22nm CMOS

A 1.2V Self-Referenced Temperature Sensor with a Time-Domain Readout and a Two-Step Improvement on Output Dynamic Range

An Energy-Efficient BJT-Based Temperature Sensor with +/- 0.8 degrees C (3 sigma) Inaccuracy from-50 to 150 degrees C

Capacitor-Reused Cmos Temperature Sensor With Duty-Cycle-Modulated Output And 0.38 Degrees C (3 Sigma) Inaccuracy

Capacitor‐reused CMOS Temperature Sensor with Duty‐cycle‐modulated Output and 0.38°C () Inaccuracy

A 1-V Diode-Based Temperature Sensor with a Resolution FoM of 3.1pj•k2 in 55nm CMOS

Capacitor-reused CMOS temperature sensor with duty-cycle-modulated output and 0.38°C ( 3 σ ) inaccuracy

An Energy-Efficient Capacitively Biased Diode-Based Temperature Sensor in 55-nm CMOS

A Compact Temperature to Frequency Converter with 3σ inaccuracy inaccuracy of +0.57/.0.65 °C for On-chip Thermal Monitoring

A 1770- $\mu$ M 2 Leakage-Based Digital Temperature Sensor with Supply Sensitivity Suppression in 55-Nm CMOS

A 840- μm 2 low-power all-MOS temperature sensor front-end with real-time voltage calibration

Design of High Precision Temperature Sensor with Current Gain Compensation Technology for On-Chip Application

A Novel Built-in CMOS Temperature Sensor for VLSI Circuits

A 840-Μm2 Low-Power All-Mos Temperature Sensor Front-End with Real-Time Voltage Calibration

A Novel Low Power Wide Supply Voltage Range Cmos Temperature Sensor With-0.2/0.5 Degrees C Error From-20 Degrees C To 60 Degrees C

A 700nW Compact Temperature Sensor With a One-Point Trimmed Inaccuracy of +1.2/–1.0 ∘C For On-Chip Thermal Monitoring