Micro-contaminations of copper and silver on silicon wafer surfaces

C Xuan,G Chi,ZD Feng

2002-01-01

Abstract:Micro-contaminations of copper and silver on n-type silicon wafer surfaces were investigated by performing a series of electrochemical polarization measurements in 5% hydrofluoric acids and ethanol solutions in the absence and presence of various concentrations of copper and/or silver. The metallically contaminated wafer surfaces were characterized by scanning electron microscopy(SEM). It was revealed that the open-circuit potentials shifted to more anodic direction and the corrosion current densities significantly increased when either copper or silver was present in solutions, and these became more pronounced when both copper and silver were simultaneously introduced into solutions. The polarization resistance, showed, a sensitive linear decrease with an increase. of copper or silver concentrations, a strong indication of an accelerated electrochemical reaction. The contaminated wafer surfaces were covered by, metallic nano-crystallites due to copper and,silver: deposition from solutions. When both copper and silver were present, the nano-crystallites tended to be coagulated each,other and various clusters were formed by combing metallic atoms. As the concentration of copper and/or silver became larger, the amounts of metallic nano-crystallites remarkably increased, this in turn further promoted metallic micro-contaminations and ultimately led to rougher wafer surfaces.