Abstract:Copper (Cu) has been widely used as interconnect materials in semiconductor industry, due to its advantages of high electrical, thermal conductivities, good electro-migration resistance and low cost. Since Cu is very reactive, contamination like physical diffusion from Cu to silicon (Si) and the chemical combination between Cu and Si is commonly observed and detrimental for Si semiconductor devices. Besides experimental study of the interaction between Cu and Si at macro scale, the physical diffusion and chemical combination also need to be understood at atomic level. Based on density functional theory (DFT), a crystal structure of Cu/Si heterojunction has been established to study the Cu/Si interfacial diffusion mechanism, including the diffusibility of vacancy and interstitial diffusion. No energy barrier exists when vacancy located at the top site, and diffusion from outside to bridge site is also possible by overcoming a relative low energy barrier. The occurrence of interstitial diffusion is also proved, but the energy barrier is higher than that of vacancy diffusion. The deeper of interstitial diffusion, more energy is required to overcome the increased energy barrier. In terms of first-principles study of chemical combination, complexes of Cu and Si have been structuralized in trigonal, hexagonal and tetragonal crystals. Stability of the crystal structures has been investigated from the aspect of mechanical and lattice stability. Tetragonal Cu3Si is proved to be the only crystal structure with both mechanical and lattice stabilities. The elastic constants, electronic structure and thermodynamical properties of the stable Cu3Si are also revealed. The results indicate the tetragonal Cu3Si exhibits metallic behaviors with good thermodynamical properties. The current study could provide meaningful insights on the inhabitation of Cu contamination and performance improvement.

Microcontamination of Silicon Wafer Surfaces by Copper and Silver

Micro-contaminations of copper and silver on silicon wafer surfaces

A Preliminary Analysis on Surface Contamination of Silicon Wafer by Cu and Fe

Multi-metal Microcontamination of Silicon Wafer Surface Characterized by Electrochemical Impedance Spectroscopy

Electrochemically Prepared Porous Silver and Its Application in Surface-Enhanced Raman Scattering

Electrochemical Investigations of P-N Junction and Copper Deposition on Semiconductor Silicon Wafers

First-principles Study of Copper Contamination in Silicon Semiconductor

Catalysis of Dispersed Silver Particles on Directional Etching of Silicon

Electrochemical Investigation of the Surface Energy: Effect of the HF Concentration on Electroless Silver Deposition Onto P-Si (1 1 1)

Electrochemical Behaviors of Silicon Wafers in Silica Slurry

Electrochemical Corrosion of Silicon Wafers in Silica Slurry

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

Effect of Silicon Wafer Surface Stains on Copper-Assisted Chemical Etching

Study on Microcontamination of Silver Onto P-Type Crystalline Silicon(111) from an Aqueous Solution Using Cyclic Voltammetry

The Influence Of So2 Environments On Immersion Silver Finished Pcbs By Mixed Flow Gas Testing

Characterizing metallization introduced polysilicon corrosion of surface micromachined structures with submicron capacitive gap

Corrosion of ImAg-Finished PCBs Subjected to Elemental Sulfur Environments

Surface Texturing Behavior of Nano-Copper Particles under Copper-Assisted Chemical Etching with Various Copper Salts System

Electrochemical migration behavior between Cu and Ag under a thin electrolyte layer containing chloride

Study of the Electroless Silver Seed Formation on Silicon Surface

Influence of Sodium Chloride and Potassium Fluoride on Electrochemical Properties of Aluminum Copper Interdigital Structures