Electrochemical Behavior of Cu-Hf-Al Amorphous Films

B. Zhang,Y. G. Chen,H. B. Guo
DOI: https://doi.org/10.1149/2.004401eel
2014-01-01
ECS Electrochemistry Letters
Abstract:A ternary Cu-Hf-Al amorphous thin film with excellent corrosion resistance was successfully synthesized using DC magnetron sputtering method. Electrochemical behaviors of the Cu-Hf-Al films have been studied in four different corrosive media (NaCl, KCl, Na2SO4, and H2SO4 solutions). According to the annealed samples' X-ray diffraction (XRD) pattern we found that the glass transition temperature T-g of the Cu-Hf-Al amorphous film is around 580 degrees C. Distinct polarization behaviors were found for the film in 1 mol/L H2SO4 and 0.5 mol/L Na2SO4 solutions. The as-synthesized films exhibit much higher corrosion resistance in H+ or Na+ environments than in Cl-environments. In Cl-containing solutions the films also show distinct spontaneous passivation although they suffer pitting by anodic polarization. Annealing was also found to affect the electrochemical behaviors of the amorphous films. The samples annealed at 600 and 700 degrees C showed complete passive behavior in the polarization curves and their passivity was broken gradually. (C) 2013 The Electrochemical Society. All rights reserved.
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