Abstract:Ga2O3 is being actively explored for high-power and high-temperature electronics, deep-ultraviolet optoelectronics, and other applications. Efficient n-type doping of Ga2O3 has been achieved, but p-type doping faces fundamental obstacles due to compensation, deep acceptor levels, and the polaron transport mechanism of free holes. However, aside from achieving p-type conductivity, plenty of opportunity exists to engineer the position of the Fermi level for improved design of Ga2O3 based devices. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench synthesis protocol for hydrogen assisted Mg doping in beta-Ga2O3, taking into account the gas phase equilibrium between H2, O2 and H2O, which determines the H chemical potential. We predict Ga2O3 doping-type conversion to a net p-type regime after growth under reducing conditions in the presence of H2 followed by O-rich annealing, which is a similar process to the Mg acceptor activation by H removal in GaN. For equilibrium annealing there is an optimal temperature that maximizes the Ga2O3 net acceptor density for a given Mg doping level, which is further increased in the non-equilibrium annealing scenario without re-equilibration. After quenching to operating temperature, the Ga2O3 Fermi level drops below mid-gap down to about +1.5 eV above the valence band maximum, creating a significant number of uncompensated neutral MgGa0 acceptors. The Fermi level reduction down to +1.5 eV and suppression of free electron density in this doping type converted (NA > ND) Ga2O3 material is of significance and impact for the design of Ga2O3 power electronics devices.

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A microwave-induced solution-polymerization synthesis of doped LaGaO3 powders

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Synthesis and Characterization of La0.85Sr0.15Ga0.80Mg0.20O2.825 by Glycine Combustion Method and EDTA Combustion Method

Synthesis and Properties of Sr- and Mg-doped LaGaO3 Materials

Preparation of La-0.Sr-9(0).Ga-1(0).Mg-8(0).O-2(2).(85) ultrafine powder by low temperature combustion synthesis

Improved Electrical Transport Properties of Polycrystalline La0.8(Ca0.12Sr0.08)MnO3 Ceramics by Ag2O Doping.

Synthesis and Properties of Sr-and Mg-doped LaGaO_3 Materials

Processing and electrical properties of doped-LaGaO3 by gelcasting

Progress on Preparing LaGaO3 Based Sr-and Mg-doped Electrolyte by Wet Chemical Method

PROCESSING AND ELECTRICAL PROPERTIES OF Sr- AND Mn-DOPED LANTHANUM GALLATE

Effect of Bi3+ Doping on the Property and Performance of the (La0.9sr0.1)0.98ga0.8mg0.2o3-Δ Electrolyte

High-temperature Stability Study of the Oxygen-Ion Conductor La0.9Sr0.1Ga0.8Mg0.2O3 − X

Preparation and Performance of Large-Area La0.9Sr0.1Ga0.8Mg0.2O3−δ Electrolyte for Intermediate Temperature Solid Oxide Fuel Cell

Preparation and characterization of La0.9Sr0.1 Ga0.8Mg0.2O2.85 oxygen-ion conductor

Computational Fermi level engineering and doping-type conversion of Ga2O3 via three-step synthesis process

Preparation of La0.8Sr0.2Ga0.83Mg0.17O2.815 powders by microwave-induced poly(vinyl alcohol) solution polymerization

Improvement in the Sintering and Electrical Properties of Strontium- and Magnesium-Doped Lanthanum Gallate by MoO3 Dopant

The Effect of Ga Doping in Nd0.7Sr0.3MnO3 System

Characteristics Of La0.85sr0.15mno3-Delta Powders Synthesized By A Glycine-Nitrate Process