Abstract:Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon wafers using Ge as an interlayer. However, the large lattice mismatch in this heteroepitaxy protocol leads to the build-up of compressive strain in the grown layers. This compressive strain limits the material quality and its thermal stability besides expanding the band gap, thereby increasing the Sn content needed to cover a broader range in the mid-infrared. Released Ge$_{1-x}$Sn$_x$ membranes provide an effective way to mitigate these harmful effects of the epitaxial strain and control the band gap energy while enabling the hybrid integration onto different substrates. With this perspective, herein strain-relaxed Ge$_{0.89}$Sn$_{0.11}$ membranes are fabricated and subsequently transfer-printed with metal contacts to create multiple photodetectors in a single transfer step. The resulting photodetectors exhibit an extended photodetection cutoff reaching a wavelength of $3.1 \,\mu$m, coupled with a significant reduction in the dark current of two orders of magnitude as compared to as-grown photoconductive devices. The latter yields a reduced cutoff of $2.8 \,\mu$m due to the inherent compressive strain. Furthermore, the impact of chemical treatment and annealing on the device performance was also investigated showing a further reduction in the dark current. The demonstrated transfer printing, along with the use of an adhesive layer, would allow the transfer of multiple GeSn membranes onto virtually any substrate. This approach paves the way for scalable fabrication of hybrid optoelectronic devices leveraging the tunable band gap of Ge$_{1-x}$Sn$_x$ in the mid-wave infrared range.

Metal-semiconductor-metal Photodetectors on a GeSn-on-insulator Platform

Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Germanium Photodetector with Enhanced Photo-response at the L-band and Beyond for Integrated Photonic Applications

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Comprehensive Investigation of GeSn Metasurface Photodetector for Short-Wave Infrared Application

Grating and Hole-Array Enhanced Germanium Lateral P-I-n Photodetectors on an Insulator Platform

High-efficiency Normal-Incidence Vertical P-I-n Photodetectors on a Germanium-on-insulator Platform

Self-power, Multiwavelength Photodetector Based on Sn-doped Ge Quantum Dots / Hexagonal Silicon Nanowires Heterostructures

Si-based GeSn photodetectors towards mid-infrared imaging applications

High-Efficiency Photo Detection at 2 Μm Realized by GeSn/Ge Multiple-Quantum-Well Photodetectors with Photon-Trapping Microstructure

Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensing

Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector

Germanium Photodetectors with 60-Nm Absorption Coverage Extension and ∼2× Quantum Efficiency Enhancement Across L-Band

Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon

Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication

Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

Transfer-printed multiple Ge$_{0.89}$Sn$_{0.11}$ membrane mid-infrared photodetectors