Abstract:Glass interposer has attracted ever-increasing attention in 2.5D/3D advanced packaging field due to its excellent mechanical performance, thermal stability, easy manufacturing process and low cost. However, the poor adhesion between the glass surface and the deposited metal layer is a severe issue resulting from the smoothness of the glass surface, which limits its widespread applications. Herein, a novel method for realizing the direct copper electroplating on TGV is presented on the basis of a silver nanowire (AgNW) conductive composite. A pre-coat containing resin is firstly applied to the glass substrate as an adhesion layer. The glass substrate, on the other hand, requires only a simple cleaning process. The AgNW is then coated on the resin layer to form the conductive seed layer. Finally, the metallization of the TGV surface is rapidly achieved by direct copper electroplating. For TGVs with a diameter of 100 μm and a thickness of 500 μm, the surface morphology characterization indicates AgNW conductive composite is successfully coated on the TGV surface with a sheet resistance of approx. 39 Ω sq-1, leading to rapid activation of the copper electroplating. The metallographic microscopy proves the asplated copper exhibits excellent coverage and plating uniformity across the TGV at 2 A/dm2 for 40 min. To further evaluate the practical performance of the as-plated copper on glass, the adhesion of the deposited copper is conducted by tape-test technique under ASTM D3359-02. The results show the copper layer has strong adhesion to the glass. Our work provides an efficacious method to directly achieve the metallization of TGV with the advantages of high metal adhesion, simple and cost-effective process. Therefore, this approach has prominent potential for application in 2.5D/3D advanced packaging.

Influence of Exposure Energy and Heat Treatment Conditions on Through-Glass Via Metallization of Photoetchable Glass Interposers

Processing Through Glass Via (TGV) Interposers for Advanced Packaging

Modeling and Characterization of Annealing Effect on the Cu Protrusion and Thermomechanically Behaviors of Through Glass Via

The Effects of Etchant on via Hole Taper Angle and Selectivity in Selective Laser Etching

Directly Electroplated Metallization on Through Glass Via (TGV) Using Silver Nanowires Conductive Composite as Seed Layer

Study of Through Glass Via (TGV) Using Bessel Beam, Ultrashort Two-Pulses of Laser and Selective Chemical Etching

Ultra‐high Aspect Ratio TGV Perforation Utilizing Selective Laser‐induced Etching with Nanochannels

Effect of Annealing Process on the Properties of Through-Silicon-via Electroplating Copper

Research on Wafer-Level MEMS Packaging with Through-Glass Vias

Study of Glass Metallization and Adhesion Evaluation for TGV Application

Experimental Study on the Fabrication of the Light Guide Plate with Hot Embossing Method

Modification of Amorphous Poly(ethylene Terephthalate) Surface by UV Light and Plasma for Fabrication of an Electrophoresis Chip with an Integrated Gold Microelectrode

A New Method of TGVs for Fast Filling of Metal Paste

Performance and reliability study of TGV interposer in 3D integration

Hot Embossing to Fabricate Parylene-Based Microstructures and Its Impact on the Material Properties

Characterization of a Semiconductor Packaging System utilizing Through Glass Via (TGV) Technology

Study of the thermo-mechanical behavior of glass interposer for flip chip packaging applications

Advances in Panel Scalable Planarization and High Throughput Differential Seed Layer Etching Processes for Multilayer RDL at 20 Micron I/O Pitch for 2.5D Glass Interposers

Thermo-Mechanical Reliability Study of Through Glass Vias in 3D Interconnection

Process Development of Through-Glass-Via (tgv) Interposer for Radio Frequency (rf) Applications

Development of high performance 2.5D packaging using glass interposer with through glass vias