Abstract:Langasite (La3Ga5SiO14, LGS) family crystals are known for their piezoelectric properties, which make them widely applicable in surface acoustic wave (SAW) devices. The group-III metal nitrides formed on LGS substrates are found to enable significant extension of SAW devices to higher-frequency ranges. However, the Ga element in LGS crystals is observed to volatilize in H-2 at high temperatures, forming Ga droplets and degrading the film quality. This study reports the growth of GaN films on the Ga-free LGS-type crystal Ca3NbAl3Si2O14 (CNAS) by metal-organic chemical vapor deposition (MOCVD), and the CNAS is stable in MOCVD. The as-grown GaN films are continuous and smooth with a roughness of 0.369 nm. The epitaxial relationship between GaN and CNAS is GaN(0001)//CNAS(0001) and GaN(10-12)//CNAS(21-32). The mixed dislocations are found to be dominant type of dislocations of the GaN films on CNAS. The GaN films also exhibit good optical properties and a compressive stress of 0.17 GPa. Thus, the results indicate that the Ga-free LGS-type crystals have great potential for applications in the epitaxial growth of GaN materials.

Crystal growth and characterization of Ca3NbGa3Si2O14 single crystal

Study on the Growth and Optical Activity of Sr3NbGa3Si2O14 Single Crystals

Study on Optical and Thermal Properties of Ca3NbGa3Si2O14 Single Crystals

Growth and Dielectric Properties of Ca3NbGa3Si2O14 Crystals

Growth and characterization of Sr3NbGa3Si2O14 single crystals

Raman Scattering Spectra of Ca3NbGa3Si2O14 (CNGS) Crystals

Growth, thermal and optical properties of Sr3NbGa3Si2O14 single crystals

A Systematic Study on Structure and Optical Properties of A3BGa3Si2O14 Series of Crystals

The Growth And Properties Of Ca(3)Taga(3)Si(2)O(14) Single Crystals

Growth and high-temperature electromechanical properties of Ca3NbX3Si2O14 (X=Ga and Al) piezoelectric crystals

Bridgman growth of a novel piezoelectric single-crystal material: Ca 3NbGa3Si2O14

Bridgman Growth of A Novel Piezoelectric Single-Crystal Material: Ca3nbga3si2o14

Bridgman Growth of a Novel Piezoelectric Single-Crystal Material: Ca<sub>3</sub>NbGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub>

Growth Of A New Ordered Langasite Structure Compound Ca3taga3si2o14 Single Crystal

Growth and high temperature properties of Ca 3 Ta(Al 0.9 Ga 0.1 ) 3 Si 2 O 14 crystals with ordered langasite structure

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal-Organic Chemical Vapor Deposition

Bridgman Growth of Sr3NbGa3Si2O14 Single Crystal

Growth, Structural, Thermal, and Optical Properties of a GaNbO4 Single Crystal

Study on the Growth and Characterization of Sr3TaGa3Si2O14 Single Crystals

Growth and Piezoelectric Properties of Large Size Ca3Ta(Ga0.5Al0.5)3Si2O14 Crystals with Langasite Structure

Study on the growth and Raman spectra of the Nd:Gd2Ga5O12 crystal