Instrumentation and Application of the Ion Beam Analysis Line of the in Situ Ion Beam System

Huang Zhi-Hong,Zhang Zao-Di,Wang Ze-Song,Wang Lang-Ping,Fu De-Jun
DOI: https://doi.org/10.13538/j.1001-8042/nst.26.010202
2015-01-01
Abstract:An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscattering (RBS), elastic recoil detection (ERD), nuclear reaction analysis (NRA) and channeling measurements. The system was tested by performing qualitative and quantitative analysis of Si, Ni/Si, BiFeO3:La/Si, MoC/Mo/Si and TiBN/Si samples RBS of a BiFeO3:La film was used as system calibration. Tested by ion beam channeling, a Si(100) is of good crystallinity (X-min = 3.01%). For thin film samples, the measured thickness agrees well with simulation results by SIMNRA. In particular, composition of a MoC/Mo/Si and TiBN film samples were analyzed by RBS and non-Rutherford elastic backscattering.
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