Abstract:Further rapid progress of electronics, in particular the increase of computer power and breakthroughs in sensor technology for industrial, medical diagnostics and environmental applications, strongly depends on the scaling of electronic devices, ultimately to the size of molecules. Design of controllable molecular-scale devices may resolve the problem of energy dissipation at the nanoscale and take advantage of molecular self-assembly in the so-called bottom-up approach. This special issue of Nanotechnology is devoted to a better understanding of the function and design of molecular-scale devices that are relevant to future electronics and sensor technology. Papers contained in this special issue are selected from the symposium Nano and Giga Challenges in Electronics and Photonics: From Atoms to Materials to Devices to System Architecture (12-16 March, 2007, Phoenix, Arizona, USA), as well as from original and novel scientific contributions of invited world-renown researchers. It addresses both theoretical and experimental achievements in the fields of molecular and bioelectronics, chemical and biosensors at the molecular level, including carbon nanotubes, novel nanostructures, as well as related research areas and industrial applications. The conference series Nano and Giga Challenges in Electronics and Photonics was launched as a truly interdisciplinary forum to bridge scientists and engineers to work across boundaries in the design of future information technologies, from atoms to materials to devices to system architecture. Following the first two successful meetings in Moscow, Russia (NGCM2002) and Krakow, Poland (NGCM2004), the third Nano and Giga Forum (NGC2007) was held in 2007 hosted by Arizona State University. Besides this special issue of Nanotechnology, two other collections (in the journal Solid State Electronics and the tutorial book in the series Nanostructure Science and Technology Springer) have published additional selected and invited papers from NGC2007. The NGC2007 meeting, which included two days of tutorials (Spring School) and a three day symposium, attracted approximately 400 participants from academic, industrial and governmental research institutions from 41 countries, and covered recent developments in the fabrication and functionality of nano-scale materials, devices and system architecture from advanced CMOS to molecular electronics, photonics, optoelectronics and magnetic materials and devices. The success of the conference would not have been possible without generous support from many sponsors and research institutions, especially from Arizona State University (conference host and co-organizer), International Science and Technology Center (ISTC), National Science Foundation (NSFT), Defense Advanced Research Agency (DARPA), Office of Naval Research, Army Research Office, Computational Chemistry List (CCL), Springer Publisher, City of Tempe, STMicroelectronics, Quarles & Brady LLP, Oak Ridge National Laboratory, Canadian Consulate in Phoenix, Salt River Project (SRP) and many other local, national and international and individual supporters. We would like to acknowledge the shared responsibility for this special issue of Nanotechnology on molecular and bioelectronics, and the highly professional support from Dr Nina Couzin, Dr Alex Wotherspoon and the Nanotechnology team from the IOP Publishing. We also acknowledge the exception made in allowing the publication of some material that is outside the normal scope of Nanotechnology.

Guest Editorial Special Section on the Second Electron Devices Technology and Manufacturing (EDTM) Conference 2018

ICCAD Tutorial Session Paper Ferroelectric FET Technology and Applications: From Devices to Systems

Improving Dual V T Technology by Simultaneous Gate Sizing and Mechanical Stress Optimization

State of the Art and Future Perspectives in Advanced CMOS Technology

Guest Editorial: Special Section on Modeling, Design, and Application of Next-Generation Power Components

CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology

Guest Editorial Special Issue on Semiconductor Device Modeling for Circuit and System Design

Guest Editorial Special Section on the 2020 and 2021 SEMI Advanced Semiconductor Manufacturing Conferences

From lab to fab: path forward for 2D material electronics

Guest Editorial IEEE Transactions on Emerging Topics in Special Section on Emerging In-Memory Computing Architectures and Applications

Challenges and Opportunities in Engineering of Next Generation 3D Microelectronic Devices: Improved Performance, Higher Integration Density

In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies

Design and function of molecular and bioelectronics devices.

More-than-Moore Steep Slope Devices for Higher frequency Switching Applications: A Designer's Perspective

Exploiting Challenges of Sub-20 nm CMOS for Affordable Technology Scaling

Guest Editorial Process-Level Machine Learning Applications in Semiconductor Manufacturing

Novel Devices and Process for 32 Nm CMOS Technology and Beyond

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms (Adv. Mater. 48/2022)

2D materials for logic device scaling

Inflection Points in GAA NS-FET to C-FET Scaling Considering Impact of DTCO Boosters