Abstract:Although RRAM‐based TCAM offers the advantage of reduced cell area, its constrained sensing margin can notably impede parallel data search functionality. This study demonstrates that incorporating nanocavity arrays into CBRAM technology using AAO nanotemplate and integrating with 180 nm CMOS FETs in 2T2R configuration can significantly enhance the sensing margin characteristics favorable for TCAM applications. The development of data‐intensive computing methods imposes a significant load on the hardware, requiring progress toward a memory‐centric paradigm. Within this context, ternary content‐addressable memory (TCAM) can become an essential platform for high‐speed in‐memory matching applications of large data vectors. Compared to traditional static random‐access memory (SRAM) designs, TCAM technology using non‐volatile resistive memories (RRAMs) in two‐transistor‐two‐resistor (2T2R) configurations presents a cost‐efficient alternative. However, the limited sensing margin between the match and mismatch states in RRAM structures hinders the potential of using memory‐based TCAMs for large‐scale architectures. Therefore, this study proposes a practical device engineering method to improve the switching response of conductive‐bridge memories (CBRAMs) integrated with existing complementary metal‐oxide‐semiconductor (CMOS) transistor technology. Importantly, this work demonstrates a significant improvement in memory window reaching 1.87 × 107 by incorporating nanocavity arrays and modifying electrode geometry. Consequently, TCAM cells using nanocavity‐enhanced CBRAM devices can exhibit a considerable increase in resistance ratio up to 6.17 × 105, thereby closely approximating the sensing metrics observed in SRAM‐based TCAMs. The improved sensing capability facilitates the parallel querying of extensive data sets. TCAM array simulations using experimentally verified device models indicate a substantial sensing margin of 65× enabling a parallel search of 2048 bits.

Ternary Content-Addressable Memory with MoS2 Transistors for Massively Parallel Data Search

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell

Ferroelectric Ternary Content Addressable Memories for Energy-Efficient Associative Search.

A Scalable 2T-1Fefet Based Content Addressable Memory Design for Energy Efficient Data Search

A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy

Ternary Content-Addressable Memory Based on a Single Two-Dimensional Transistor for Memory-Augmented Learning

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors (adv. Electron. Mater. 12/2022)

An Ultracompact Single-Ferroelectric Field-Effect Transistor Binary and Multibit Associative Search Engine

Energy Efficient Data Search Design and Optimization Based on a Compact Ferroelectric FET Content Addressable Memory

8F2 Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-diodes with 2 × 105 Self-rectifying Ratio

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

CMOS‐Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin

A Novel Ternary Content Addressable Memory Design Based on RRAM with High Intensity and Low Search Energy

CMOS-RRAM Based Non-Volatile Ternary Content Addressable Memory (nvTCAM)

In-Memory Search With Phase Change Device-Based Ternary Content Addressable Memory

Highly Area-Efficient Low-Power SRAM Cell with 2 Transistors and 2 Resistors

Design Exploration of Dynamic Multi-Level Ternary Content-Addressable Memory Using Nanoelectromechanical Relays

An Energy-efficient Capacitive-RRAM Content Addressable Memory

Energy-efficient Ternary Content Addressable Memory Using Ferroelectric FET