Abstract:Although RRAM‐based TCAM offers the advantage of reduced cell area, its constrained sensing margin can notably impede parallel data search functionality. This study demonstrates that incorporating nanocavity arrays into CBRAM technology using AAO nanotemplate and integrating with 180 nm CMOS FETs in 2T2R configuration can significantly enhance the sensing margin characteristics favorable for TCAM applications. The development of data‐intensive computing methods imposes a significant load on the hardware, requiring progress toward a memory‐centric paradigm. Within this context, ternary content‐addressable memory (TCAM) can become an essential platform for high‐speed in‐memory matching applications of large data vectors. Compared to traditional static random‐access memory (SRAM) designs, TCAM technology using non‐volatile resistive memories (RRAMs) in two‐transistor‐two‐resistor (2T2R) configurations presents a cost‐efficient alternative. However, the limited sensing margin between the match and mismatch states in RRAM structures hinders the potential of using memory‐based TCAMs for large‐scale architectures. Therefore, this study proposes a practical device engineering method to improve the switching response of conductive‐bridge memories (CBRAMs) integrated with existing complementary metal‐oxide‐semiconductor (CMOS) transistor technology. Importantly, this work demonstrates a significant improvement in memory window reaching 1.87 × 107 by incorporating nanocavity arrays and modifying electrode geometry. Consequently, TCAM cells using nanocavity‐enhanced CBRAM devices can exhibit a considerable increase in resistance ratio up to 6.17 × 105, thereby closely approximating the sensing metrics observed in SRAM‐based TCAMs. The improved sensing capability facilitates the parallel querying of extensive data sets. TCAM array simulations using experimentally verified device models indicate a substantial sensing margin of 65× enabling a parallel search of 2048 bits.

CMOS-RRAM Based Non-Volatile Ternary Content Addressable Memory (nvTCAM)

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

A Scalable 2T-1Fefet Based Content Addressable Memory Design for Energy Efficient Data Search

Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell

A Novel Cascadable TCAM Using RRAM and Current Race Scheme for High-Speed Energy-Efficient Applications

A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy

A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

Ferroelectric Ternary Content Addressable Memories for Energy-Efficient Associative Search.

A Novel Ternary Content Addressable Memory Design Based on RRAM with High Intensity and Low Search Energy

A Novel 2T2R CR-based TCAM Design for High-speed and Energy-efficient Applications

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

CMOS‐Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin

A Novel 15T-4MTJ Based Non-volatile Ternary Content-Addressable Memory Cell for High-Speed, Low-Power and High-Reliable Search Operation.

Energy Efficient Data Search Design and Optimization Based on a Compact Ferroelectric FET Content Addressable Memory

An Energy-efficient Capacitive-RRAM Content Addressable Memory

Dynamic Ternary Content-Addressable Memory is Indeed Promising: Design and Benchmarking Using Nanoelectromechanical Relays.

A Novel MTJ-Based Non-Volatile Ternary Content-Addressable Memory for High-Speed, Low-Power, and High-Reliable Search Operation

Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F2 and K-means Clustering for Power Reduction

A Novel Multi-Context Non-Volatile Content-Addressable Memory Cell and Multi-Level Architecture for High Reliability and Density.

Multi-context non-volatile content addressable memory using magnetic tunnel junctions

A High-Speed Robust NVM-TCAM Design Using Body Bias Feedback