Abstract:Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are attractive for high frequency and low-loss surface acoustic wave devices. In this work, ZnO films are deposited on AlxGa1-xN/c-Al2O3 (0 < or = chi < or = 1) substrates using the radio frequency (RF) sputtering technique. In comparison with a single AlxGa1-xN layer deposited on c-Al2O3 with the same total film thickness, a ZnO/AlxGa1-xN/c-Al2O3 multilayer structure provides several advantages, including higher order wave modes with higher velocity and larger electromechanical coupling coefficient (K2). The surface acoustic wave (SAW) velocities and coupling coefficients of the ZnO/AlxGa1-xN/c-Al2O3 structure are tailored as a function of the Al mole percentage in AlxGa1-xN films, and as a function of the ZnO (h1) to AlxGa1-xN (h2) thickness ratio. It is found that a wide thickness-frequency product (hf) region in which coupling is close to its maximum value, K(2)max, can be obtained. The K(2)max of the second order wave mode (h1 = h2) is estimated to be 4.3% for ZnO/GaN/c-Al2O3, and 3.8% for ZnO/AlN/c-Al2O3. The bandwidth of second and third order wave modes, in which the coupling coefficient is within +/- 0.3% of K(2)max, is calculated to be 820 hf for ZnO/GaN/c-Al2O3, and 3620 hf for ZnO/AlN/c-Al2O3. Thus, the hf region in which the coupling coefficient is close to the maximum value broadens with increasing Al content, while K(2)max decreases slightly. When the thickness ratio of AlN to ZnO increases, the K(2)max and hf bandwidth of the second and third higher wave modes increases. The SAW test devices are fabricated and tested. The theoretical and experimental results of velocity dispersion in the ZnO/AlxGa1-xN/c-Al2O3 structures are found to be well matched.

Investigation of Surface Acoustic Waves Anisotropy on High-Quality AlN/Sapphire Grown by Hydride Vapor Phase Epitaxy

High speed surface acoustic wave and laterally excited bulk wave resonator based on single-crystal non-polar AlN film

Surface acoustic wave devices fabricated on epitaxial AlN film

High-Performance SAW Resonators Based on Single-crystalline a-Plane AlN Thin Films on Sapphire Substrates

An Experimental and Theoretical Study of Impact of Device Parameters on Performance of AlN/Sapphire-Based SAW Temperature Sensors

Investigation of Surface Acoustic Wave Characteristics in Gallium Nitride Thin Film Grown on Sapphire

Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Frequency Response Improvement of a Two-Port Surface Acoustic Wave Device Based on Epitaxial AlN Thin Film

Generation of GHz surface acoustic waves in (Sc,Al)N thin films grown on free-standing polycrystalline diamond wafers by plasma-assisted molecular beam epitaxy

Design and Analysis of Guided Surface Acoustic Waves in ScAlN on Sapphire for Phononic Integrated Circuits

High Crystalline Quality A-Axis Oriented Al<inf>0.56</inf>Sc<inf>0.44</inf>N Films for High Coupling Saw Applications

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Theoretical and Experimental Study of High-Electromechanical-Coupling Surface Acoustic Wave Resonators Based on A-Plane (1120)al0.56sc0.44n Films

Theoretical and experimental study of high electromechanical coupling SAW resonators based on a‐plane ( 11 2 ̄ 0 ) Al0.56Sc0.44N films

Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy

Surface acoustic wave resonators based on (002)AlN/Pt/diamond/silicon layered structure

Temperature dependent angular dispersions of surface acoustic waves on GaAs

Surface Acoustic Wave Characteristics Based on C-Axis (006) LiNbO3/diamond/silicon Layered Structure

Low-Temperature Characteristics of an AlN/Diamond Surface Acoustic Wave Resonator

Analysis of SAW properties in ZnO/AlxGa1-xN/c-Al2O3 structures