Applying Silver Tellurite to Optimize Ag/Si Contact Interface in Silicon Solar Cells

Liu Jian,Zhao Qing-He,Yang Lu-Yi,Lin Yuan,Pan Feng
DOI: https://doi.org/10.14102/j.cnki.0254-5861.2011-2779
2020-01-01
Abstract:Nowadays, researches on developing new etching materials to optimize the Ag/Si contact interface in silicon solar cells (SSCs) are rare, which alleviates the further development of SSCs. In this study, silver tellurite (Ag2TeO3, monoclinic, P2(1)/a(14)) is synthesized and developed as an excellent etching material in SSCs. The Ag2TeO3 displays a low starting temperature of etching Si3N4 of similar to 545 degrees C, which is similar to 160 degrees C lower than that of PbO. Besides, by applying Ag2TeO3, conductive silver nanoparticles with a length of about 300 similar to 500 nm and a thickness of similar to 50 nm form in the Ag/Si contact interface, which effectively reduces the Ag-Si contact resistance, and leads to a high solar cell efficiency of similar to 18.4%. This study opens a new window for further enhancing the solar cell efficiency in the future.
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