Passively-Q-Switched 1.33 Μm Nd:Luysgg Laser with the Bi2Se3 Topological Insulator As a Saturable Absorber

Wang Baolin
DOI: https://doi.org/10.1007/s10946-020-09886-6
IF: 0.81
2020-01-01
Journal of Russian Laser Research
Abstract:In this work, we demonstrate a passively-Q-switched 1.33 μm Nd:Lu2YSc1.5Ga3.5O12 (Nd:LuYSGG) laser based on the Bi2Se3 topological insulator (TI) as a saturable absorber (SA). We obtain pulse widths as low as 146 ns at a pulse repetition rate of 349.5 kHz and a pulse energy of 1.03 μJ, which provides a peak power of 7.05 W. These results represent some of best yet published in terms of repetition rate, pulse width, and peak power for TI-based Q-switched 1.3 μm lasers, which indicates that TIs are suitable as SAs in the 1.3 μm region.
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