Abstract:Ga-doped ZnO nanowire has a wurtzite hexagonal structure and has been prepared in a horizontal tube furnace by thermal chemical vapor deposition method. In this work, we fabricate the Ga-doped ZnO nanowires without a metalized catalyst through the thermal evaporation of the Zn powers and Ga degrees C.Temperature is the metals at a low growth temperature of 550 d critical experimental parameter for the formation of Ga-dope the ZnO nanowires.This evaporation process can be attributed to Ga dopant In the lattice position of he ZnO nanowires. As shown In scanning electron microscopy (SEM), nanowires of different diameters are evenly arranged on the Si substrate and nucleated via a self-catalysed mechanism by depositing a layer of ZnO film as the crystallization plant before growing ZnO nanowires on the film. Self-catalyzed growth of Ga-doped ZnO nanowires are of diameters 35-150nm and lengths up to several ones of micrometers. High resolution Transmission electron microscope (HRTEM) those lattice image of Ga doped ZnO nanowires, wherein nanowires are seen a lattice of a=3.25 angstrom and c=5.19 angstrom. As determine by selected area diffraction (SAD), the growth direction of Ga-doped ZnO nanowires is [001] and the nanowire consists of single-crystailline ZnO crystals.The luminescence spectra of the Ga-doped ZnO nanowires exhibit a UV band at 374nm and a strong green band at 498nm. In addition, the Ga-doped ZnO nano,wires with different diameters have a larger green light/UV ratio due to the recombination of holes with the electrons occupying the singly ionized more O vacancies that are larger In number. By virue of the doping of Ga, we observe that Ga-doped ZnO nanowires becomes broader and shifts to a longer wave 498nm at a lower energy and a strong green emission as compared to the undoped one in the cathodoluminescence and photoluminescence spectra. The Ga-doped ZnO nanowires; have a greater field-enhancement factor than the undoped ZnO nanowies. The Ga-doped ZnO nanowires with a low turn on field (12V mu m(-1)) are apparently lower than the undoped ZnO nanowires. Our results demonstrate that Ga-doped ZnO nanowires can provide the possibility of application In optoelectric nanodevices.

Enhanced Field Emission Performance of Ga-Doped In2o3(Zno)(3) Superlattice Nanobelts

Field Emission and Optical Properties of Ga-doped ZnO Nanowires Synthesized Via Thermal Evaporation

Enhanced Photoluminescence and Field-Emission Behavior of Vertically Well Aligned Arrays of In-Doped Zno Nanowires

Indium-doped Zinc Oxide Nanobelts

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Synthesis And Photoluminescence Of Ingao3(Zno)(M) Nanowires With Perfect Superlattice Structure

Characterization of Ga-doped ZnO Nanowires Grown by Thermal Chemical Vapor Deposition

Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate

Optical and Electrical Properties of Ga-Doped ZnO Nanowire Arrays on Conducting Substrates

Zero-dimensional Field Emitter Based on ZnO Quantum Dots

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors.

Suppression of Visible Light Emission of Zno Nanostructures by Ga-Doping

Enhanced Field Emission Properties from Well-Aligned ZnO Nanocones

Large-scale Fabrication and Luminescence Properties of GaN Nanostructures by a Soft UV-curing Nanoimprint Lithography.

Photoluminescence of Ga-doped ZnO Nanorods Prepared by Chemical Vapor Deposition

Enhanced electron field emission of two-dimensional boron-doped ZnO nanoflakes on nanocrystal diamond films

Synthesis and Characterization of ZnO:In Nanowires with Superlattice Structure

One-Dimensional Zn-Doped in 2 O 3 -Sno 2 Superlattice Nanostructures

Preparation and Field Emission Performance of Metal-Doped ZnO NRAs/Graphene Composite Material

Interfacially Al-doped ZnO Nanowires: Greatly Enhanced Near Band Edge Emission Through Suppressed Electron-Phonon Coupling and Confined Optical Field.

Preparation of ZnGa2O4 nanoflowers and their full-color luminescence properties