Abstract:The ability to spatially resolve the carrier mobility profile along the cross section of micrometer-thin solar cells is vital, both for fundamental studies in photovoltaics and as quality control for reproducibly obtaining high conversion efficiencies in commercial solar cell modules. Presently, no technique capable of such an endeavor is available to the best of our knowledge. Here, we introduce a novel method capable of profiling the carrier mobility along the z axis in thin-film photovoltaics. Our setup is based on the integration of photogenerated charge extraction by linearly increasing voltage (p-CELIV) with a scanning confocal optical microscope (SCOM) toward a confocal and cross-sectional p-CELIV (cs-p-CELIV) system. As monomolecular recombination of excess carriers is the most frequent radiative pathway for electrons and holes in solar cells at low power density of illumination, while multimolecular recombination dominates at high power, enhanced multimolecular recombination occurs at the SCOM focal plane. Thus, the cs-p-CELIV signal provides enhanced information on the mobility of all of the cross-sectional layers except the focal plane. By scanning the focal plane along the z axis, the mobility profile can be derived. To demonstrate our technique, we use it to investigate the carrier mobility in three hydrogenated amorphous silicon (a-Si:H) solar cells. The mobility profiles obtained by cs-p-CELIV correlate well with well-known depletion layer effects and the H content profile in a-Si:H, which is measured independently. Our findings are in excellent agreement with models suggesting a critical role of Si–H bonding in locally determining the carrier mobility in a-Si:H.

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