Abstract:The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards ultra-high-performance semiconductor lasers for many key novel applications, either as stand-alone sources or as on-chip sources in photonic integrated circuits. However, the fabrication of conventional buried Bragg grating structures on GaAs, GaAs/Si, GaSb and other material platforms have been met with major material regrowth difficulties. We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable, reliable and strong coupling between the grating and the optical mode. We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed 0.8 THz LWDM frequency intervals in the 1300 nm band with record performance parameters, including side mode suppression ratios as high as 52.7 dB, continuous-wave output power of 27.7 mW (room-temperature) and 10 mW (at 70°C), and ultra-low relative intensity noise (RIN) of < -165 dB/Hz (2.5-25 GHz). The devices are also capable of operating isolator-free under very high external reflection levels of up to -12.3 dB whilst maintaining the high spectral and ultra-low RIN qualities. These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints, thus universally applicable across different material platforms and wavelength bands.

Laterally-coupled distributed feedback lasers with optimized gratings by holographic lithography etching

Single-lobe, Surface-Normal Beam Surface Emission from Second-Order Distributed Feedback Lasers with Half-Wave Grating Phase Shift

High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95μm

Mode Selection in InGaAs/InGaAsP Quantum Well Photonic Crystal Lasers Based on Coupled Double-Heterostructure Cavities.

High performance distributed feedback quantum dot lasers with laterally coupled dielectric grating

1.3 Μm 10-Wavelength Laterally Coupled Distributed Feedback Laser Array with High-Duty-Ratio Gratings

1.55-/Spl Mu/m AlGaInAs-InP Laterally Coupled Distributed Feedback Laser

Study of Gain-Coupled Distributed Feedback Laser Based on High Order Surface Gain-Coupled Gratings

Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

Second-Order Distributed Feedback Quantum Cascade Lasers at 7.8μm

1.3 Μm Laterally-Coupled Distributed Feedback Laser with a Triangular Prism Etched Facet

GaAlAs/GaAs multiquantum well gain-coupled distributed feedback lasers with absorptive gratings all grown by MBE

Laterally Coupled Distributed Feedback Laser with Dry-Etched Deep Gratings

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELs by Direct Wafer-Bonding

975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

Distributed feedback semiconductor lasers and their application in photonic integrated devices

Emission characteristics of surface second-order metal grating distributed feedback semiconductor lasers

1.3 Μm Laterally Coupled Distributed Feedback Laser with High Side Mode Suppression Ratio and Bandwidth

Room-temperature DBR-free VCSEL operation on an InGaN/GaN thin-film platform with a monolithic surface grating

GaSb-Si3N4 hybrid lasers with precise wavelength control and narrow spectral linewidth based on low-kappa Bragg gratings

Multiple-beam colloidal quantum dot lasers in a waveguide-grating-waveguide microcavity