High Temperature Dielectric Stable (1-X) [(na0.5bi0.5)0.92ba0.08]0.955la0.03tio3 -Xnanbo3 System with Ultra-Low Dielectric Loss Range Through Optimizing the Defect Chemistry

Zepeng Wang,Lixue Zhang,Ruirui Kang,Pu Mao,Fang Kang,Qinzhao Sun,Jiping Wang

DOI: https://doi.org/10.1016/j.jallcom.2020.156308

IF: 6.2

2020-01-01

Journal of Alloys and Compounds

Abstract:High permittivity and low dielectric loss are important for the application of high-temperature dielectrics. In present study, high temperature dielectrics based on (1-x) [(Na0.5Bi0.5)(0.92)Ba-0.08](0.955)La0.03TiO3-xNaNbO(3) compositions were synthesized by a conventional solid-state reaction method. The microstructure, dielectric, ferroelectric and electrical properties were systematically investigated. All the samples show relatively high permittivity and excellent low dielectric loss range from-90 degrees C up to 400 degrees C. Impressively, the composition x = 0.06 shows a high permittivity of 2436 at 150 degrees C (1 kHz), (epsilon(r) - epsilon(r) 150 degrees C)/epsilon(r) 150 degrees C varying no more than 15% in the temperature range of 54 degrees C-34 4 degrees C together with low loss (tan delta <= 0.02) range between 92 degrees C and 400 degrees C. By developing highly-localized complex defectdipoles with La and NaNbO3 dopants to restrain the mobility of oxygen vacancy, as verified by XPS and resistivity-temperature results, the dielectric loss is limited to rather low values. Hence, the current system will be a promising candidate in high temperature ceramic capacitors. (C) 2020 Elsevier B.V. All rights reserved.