Structure and Dielectric Property of Catisio5 Doped Bst Ceramics Sintered at Low Temperature

Xinyou Huang,Jia Yin,Chunhua Gao,Musheng Huang,Zhenxing Yue

DOI: https://doi.org/10.1080/00150193.2016.1233021

2016-01-01

Ferroelectrics

Abstract:Structure and dielectric property of CaTiSiO5 doped (Ba, Sr)TiO3(barium strontium titanate, BST) capacitor ceramics were studied by means of X-ray diffraction(XRD),Scanning electron microscopy(SEM) and traditional solid sate sintered method. The results showed that dielectric loss of BST ceramics doped with CaTiSiO5 had low value, moving effect and broadening effect of CaTiSiO5 for curie peak of BST ceramics were obvious. Dielectric constant(E-r) increased firstly and then decreased, dielectric loss (tan) increased firstly and then decreased, AC withstand voltage strength(E-b) increased firstly and then decreased, capacitance temperature changing rate(C/C) decreased firstly and then increased in the negative temperature range and positive temperature range, when CaTiSiO5 doping amount increased. The BST ceramics possessed good comprehensive property with E-r of 2540, tan of 0.0036, E-b of 5.6 kV/mm(AC), C/C of -18.9 approximate to 20.6% in the temperature range of -30 degrees approximate to 85 degrees, the capacitance temperature characteristic was suited for Y5S, when CaTiSiO5 doping amount was 0.8wt.%.