Structure and enhanced dielectric temperature stability of BaTiO3-based ceramics by Ca ion B site-doping

Xuewen Jiang,Hua Hao,Yang Yang,Enhao Zhou,Shujun Zhang,Ping Wei,Minghe Cao,Zhonghua Yao,Hanxing Liu
DOI: https://doi.org/10.1016/j.jmat.2020.09.001
IF: 8.589
2021-03-01
Journal of Materiomics
Abstract:The Ca ion substituting Ti ion was confirmed in BaTi<sub>1-x</sub>Ca<sub>x</sub>O<sub>3-x</sub> [BTC100×] (0 ≤ x ≤ 0.05) ceramic system.The low temperature stability of dielectric constant was improved with the Ca ion substituting Ti ion.The dielectric-temperature stability was improved further with the addition of Bi(Zn<sub>0·5</sub>Ti<sub>0.5</sub>)O<sub>3</sub> (BZT) into BTC4.The dielectric-temperature stability of 0.85BTC4-0.15BZT ceramics met the requirement of X9R capacitor specification.Capacitor is an important part of many electronic devices, so the temperature stability as one key parameter of capacitor needs to be improved constantly for meeting the requirements of various application temperature. Here, combined with the X-ray diffraction (XRD), selected area electron diffraction (SAED) and Vienna Ab-initio Simulation Package (VASP) calculation, it was confirmed that Ca ion can substitute the Ti site in the BaTi<sub>1-x</sub>Ca<sub>x</sub>O<sub>3-x</sub> [BTC100×] (0 ≤ x ≤ 0.05) ceramics synthesized by solid-phase method which greatly improved the low-temperature stability of dielectric constant. Moreover, introducing Bi<sup>3+</sup> and Zn<sup>2+</sup> into BTC4 to form (1-y)BaTi<sub>0·96</sub>Ca<sub>0·04</sub>O<sub>2.96</sub>-yBi(Zn<sub>0·5</sub>Ti<sub>0.5</sub>)O<sub>3</sub> [(1-y)BTC4-yBZT] (0.1 ≤ y ≤ 0.2) ceramics can further improve the dielectric-temperature stability by means of diffused phase transition and core-shell structure. Most importantly, the 0.85BTC4-0.15BZT ceramics with a pseudocubic perovskite structure possessed a temperature coefficient of capacitance at 25 °C (<span class="math"><math>TCC25°C</math></span>) being less than ±15% over a wide temperature range of −55 °C–200 °C and a temperate dielectric constant (ε = 1060) and low dielectric loss (tanδ = 1.5%), which measure up to the higher standard in the current capacitor industry such as X9R requirements.<span class="display"><span><ol class="links-for-figure"><li><a class="anchor download-link u-font-sans" href="https://ars.els-cdn.com/content/image/1-s2.0-S2352847820303853-fx1_lrg.jpg"><span class="anchor-text">Download : <span class="download-link-title">Download high-res image (421KB)</span></span></a></li><li><a class="anchor download-link u-font-sans" href="https://ars.els-cdn.com/content/image/1-s2.0-S2352847820303853-fx1.jpg"><span class="anchor-text">Download : <span class="download-link-title">Download full-size image</span></span></a></li></ol></span></span>
materials science, multidisciplinary,chemistry, physical,physics, applied
What problem does this paper attempt to address?
### What problem does this paper attempt to solve? This paper primarily aims to address the following two key issues: 1. **Confirming the substitution position of Ca ions in BaTiO₃-based ceramics**: - Through methods such as X-ray diffraction (XRD), selected area electron diffraction (SAED) in transmission electron microscopy, and calculations using the Vienna Ab initio Simulation Package (VASP), it was confirmed that Ca ions can substitute the Ti position in BaTi₁₋ₓCaₓO₃₋ₓ (BTC100x) ceramics, thereby improving the stability of the dielectric constant at low temperatures. 2. **Improving the dielectric temperature stability of BaTiO₃-based ceramics**: - The study investigated the introduction of Bi³⁺ and Zn²⁺ to form (1-y)BaTi₀.₉₆Ca₀.₀₄O₂.₉₆-yBi(Zn₀.₅Ti₀.₅)O₃[(1-y)BTC4-yBZT] ceramics, further enhancing dielectric temperature stability. Specifically, the 0.85BTC4-0.15BZT ceramics exhibited a temperature coefficient (TCC) of less than ±15% over a wide temperature range from -55°C to 200°C, meeting the X9R standard requirements. These ceramics also demonstrated good high-temperature dielectric stability, a moderate dielectric constant (ε = 1060), and low dielectric loss (tan δ = 1.5%).