Highly efficient white phosphorescent organic light-emitting devices using an electron/exciton blocker
Wen-long JIANG,Gui-ying DING,Jin WANG,Jing WANG,Li-zhong WANG,Xi CHANG,Qiang HAN,Hong-mei WANG,Xiao-hong ZHAO
DOI: https://doi.org/10.3321/j.issn:1005-0086.2008.05.008
2008-01-01
Abstract:The highly efficient white phosphorescent organic light-emitting devices (WOLEDs) were fabricated using an electron/exciton blocker. The device structure was ITO/2T-NATA (25 nm)/NPBX(25-d nm)/CBP:5%Ir(ppy)3:0.5%Ru-brene(8 nm)/NPBX(dnm)/DPVBi(30 nm)/TPBi(20 nm)/Alq(10 nm)/LiF(l nm)/Al, where NPBX is N, N′-bis-(1-naphthyl)-N, N′-diphenyl-1, 1′-biphenyl-4, 4′-diamine as a hole transporting layer and electron/exciton blocker, CBP is 4, 4, N, N′-dicarbazolebiphenyl as host, DPVBi is 4, 4′-bis(2, 2-diphenyl vinyl)-1, 1′-biphenyl as blue fluorescent dye, rubrene is 5, 6, 11, 12,-tetraphenylnaphthacene as fluorescent dye, Ir(ppy)3 is factris (2-phenylpyridine) iridium as phosphorescent sensitizer, and Alq is tris(8-hydroxyquinoline) aluminum as an electron-transporting layer. The WOLEDs obtained white light emission by adjusting thickness of NPBX, when the concentration of Ir(ppy)3 is 5.0 wt% and rubrene is 0.5 wt%, respectively, the thickness of the doped emissive layer is 8 nm. In the WOLEDs, a maximum luminous efficiency is 11.2 cd/A with d is 10 nm at applied voltage of 7 V, a maximum luminance of 28170 cd/m2 at applied voltage of 17 V, and CIE coordinates is (0.37.0.42), which is in white region.