Abstract:White organic light emitting diodes (WOLED) employing blue, green and red thermally activated delayed fluorescence (TADF) emitters of DMAC-DPS(B), 4CzIPN(G) and 4CzTPN-Ph(R) and various emission layer (EML) structures of G/B, G/R/B and R:G(4CzTPN-Ph(R) doped in 4CzIPN(G) host)/B are fabricated and the effects of the EML structure, including EML thickness and 4CzTPN-Ph(R) dopant concentration, on the electroluminescence (EL) performance are investigated. It is found that the WOLED with the simple EML structure of G(20 nm)/B(10 nm) demonstrates maximum power efficiency (PE) around 16 lm/w and color rendering index (CRI) of 81. Meanwhile, R:G/B EML exhibits better EL performance than that of G/R/B EML. Especially, striking high CRI of 90 together with maximum PE around 13 lm/w can be obtained for R(1 wt%):G(20 nm)/B(10 nm) EML by meticulously modulation of EML thickness and 4CzTPN-Ph(R) dopant concentration, indicating the achievement of balance between EL efficiency and CRI for non-doped TADF emitter-based WOLED. Furthermore, the stacked EML of G(20 nm)/R(0.1 nm) and G(20 nm)/R( 0.1 nm)/B(10 nm) reveal much more serious obstruction of delayed fluorescence (DF) compared to mixed EML of R(1 wt%):G(20 nm) and R(1 wt%):G(20 nm)/B(10 nm), implying more intensified quenching effects from the sandwiched 0.1 nm 4CzTPN-Ph(R) layer which will lead to deterioration of EL performance. Different energy transfer routes are derived based on the transient photoluminescence decaying dynamics of R(1 wt%):G(20 nm)/B(10 nm) and G(20 nm)/R(0.1 nm)/B(10 nm) EML and the sandwiched 4CzTPN-Ph(R) ultrathin layer is found to be critical. The decaying dynamics responsible for such EML structure dependent EL performance is discussed in detail.

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