Abstract:Self‐aligned gate transistors are developed with bilayer source/drain electrodes and a photonically cured indium‐gallium‐zinc‐oxide as the semiconducting channel. The proposed transistor architecture minimizes the overlap capacitances and access resistance while enabling precise electrode work function engineering without increasing manufacturing complexity. The ensuing transistors exhibit high electron mobility, small subthreshold swing, and low contact resistance. Metal oxide thin‐film transistors (TFTs) offer remarkable opportunities for applications in emerging transparent and flexible microelectronics. Unfortunately, their performance is hindered by limitations associated with parasitic effects, such as parasitic electrode overlap capacitances and high contact resistance, which can severely limit their dynamic behavior. Here, an innovative method is reported to fabricate coplanar self‐aligned‐gate (SAG) indium‐gallium‐zinc‐oxide (IGZO) transistors with engineered source/drain contacts. The manufacturing process starts with the deposition and patterning of a gate electrode/dielectric stack and its functionalization with an organic self‐assembled monolayer (SAM) as the surface energy modifier. A second gold (Au) electrode is subsequently deposited over the gate electrode stack. The overlapping region between the two electrodes is removed via self‐delamination under mild sonication, forming perfectly aligned coplanar Au‐Gate‐Au electrodes. Device fabrication is completed with the spin coating of the IGZO precursor, followed by rapid photonic curing. Replacing the gold source/drain contact with bimetallic electrodes such as Au/In and Au/ITO enables a reduction in contact resistance and improves the transistor performance remarkably without increasing manufacturing complexity. The method is highly scalable, robust, and applicable to other semiconductor materials.

Systematic Defect Manipulation in Metal Oxide Semiconductors Towards High-Performance Thin-Film Transistors

High-performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays

High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation

Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways.

Technology Issues for Self-aligned Top-Gate Amorphous Metal Oxide Thin-Film Transistors

Self-Aligned Elevated-Metal Metal-Oxide Thin-Film Transistors for Displays and Flexible Electronics

Spray-combustion Synthesis: Efficient Solution Route to High-Performance Oxide Transistors

Effect of oxygen defect on the performance of Nd: InZnO high mobility thin-film transistors

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Solution-processed metal-oxide thin-film transistors: a review of recent developments

Implementing Room‐Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control

Impact of Layer Configuration and Doping on Electron Transport and Bias Stability in Heterojunction and Superlattice Metal Oxide Transistors

Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics

Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale

High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation.

Supercritical Ammoniation-Enabled Interfacial Polarization for Function-Mode Transformation and Overall Optimization of Thin-Film Transistors

Significant Degradation Reduction in Metal Oxide Thin-Film Transistors via the Interaction of Ionized Oxygen Vacancy Redistribution, Self-Heating Effect, and Hot Carrier Effect

Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing

High-Performance Sputter-Prepared Metal-Oxide Thin-Film Transistors Based on Solution-Processed Targets

Enhanced Performance of P-Type SnO X Thin Film Transistors Through Defect Compensation

Mobility–stability trade-off in oxide thin-film transistors