Abstract:There are significant differences in the extent of impurity incorporation on different crystallographic directions of GaN microstructures, and the impurity-related deep energy level behavior will have a significant impact on device performance. However, a comprehensive understanding of the effect of lateral growth on device performance has not been achieved due to the lack of comprehensive spatial distribution characterization of the optical behavior and impurity incorporation in GaN microstructures. We present a comprehensive study of the optical behavior and growth mechanism of self-assembled GaN microdisks using nanoscale spatially resolved cathodoluminescence (CL) mapping. We have found a clear growth orientation-dependent optical behavior of the lateral and vertical growth sectors of self-assembled GaN microcrystals. The lateral growth sector, i.e., the {101̅1} sector, forms six side facets of the microdisk and shows significant near-bandgap emission (NBE) and weak deep energy level luminescence. Cavity effect enhanced emission was found for the first time in such a truncated hexagonal Na-flux GaN microdisk system with an ultra-smooth surface ( R a < 0.7 nm) and low stress. The self-assembled microdisk shows significant ultraviolet (UV) lasing action (main lasing peak wavelength 370.9 nm, quality factor 1278, threshold 6 × 10 4 µJ/cm 2 ) under pulsed optical pumping. We believe that the appearance of UV lasing action may be related to the light limitation on the six side facets of the lateral growth of the GaN microdisk, the high structural quality, the low content of deep energy level defects, the low surface roughness, and the low stress.

Study of Optical Properties of High-Q GaN Disk-Shaped Microresonant Cavity

Optical Properties and Resonant Modes in GaN/AlGaN and InGaN/GaN Multiple Quantum Well Microdisk Cavities

Optical Modes Within III-nitride Multiple Quantum Well Microdisk Cavities

Double-triangular whispering-gallery mode lasing from a hexagonal GaN microdisk grown on graphene

GaN Microdisks with a Single Porous Optical Confinement Layer for Whispering Gallery Mode Lasing

High-efficiency photon-electron coupling resonant emission in GaN-based microdisks on Si

Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk

Whispering-gallery Mode Hexagonal Micro-/Nanocavity Lasers [Invited]

Whispering-Gallery Mode Lasing in a Floating GaN Microdisk with a Vertical Slit

The Study on the Lasing Modes Modulated by the Dislocation Distribution in the GaN-Based Microrod Cavities

Electrically injected GaN-based microdisk towards an efficient whispering gallery mode laser

Approach to Single-Mode Dominated Resonant Emission in GaN-Based Square Microdisks on Si

Realization of Regular Resonance Mode in GaN-based Polygonal Microdisks on Si

Mode Study Of The Light Emission Distribution In Semiconductor Microdisks By Using Near-Field Optical Microscopy

Study Of Whispering-Gallery Mode Of Ingap Microdisks By Using Scanning Near-Field Optical Microscopy

Optical Resonant Modes in Ingan Mqw/Gan Micro-Cone

Photoluminescence Properties of Gan/AlGaN Multiple Quantum Well Microdisks

The Study on the Mode Competition in GaN-based Hexagonal Microcavity

The Effect of Lateral Growth of Self-Assembled GaN Microdisks on UV Lasing Action

High- Q Exterior Whispering-Gallery Modes in a Double-Layer Crystalline Microdisk Resonator

Adjustable Enhanced Photoluminescence in Whispering-Gallery-mode Microdisk Arrays