Theoretical investigations on CH2=CH-CH2OH on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces

Jing Li,Yong-Quan Qu,Ke-Li Han,Guo-Zhong He
DOI: https://doi.org/10.1016/J.SUSC.2005.04.050
IF: 1.9
2005-01-01
Surface Science
Abstract:Density functional theory simulations with cluster model are performed to investigate the reaction mechanism of CH2=CH-CH2OH on the bare Si(100)-2 x 1 and Ge(10 0)-2 x I surfaces and probe the factors that control the competition and selectivity of organic functionalization on the clean semiconductor surfaces. Our calculations indicate that the reaction pathway via O-H dissociation is favored in kinetic factors on the Si(I 0 0)-2 x I and the Ge(I 0 0)-2 x I surfaces. The dissociation can occur on a single dimer or across two adjacent dimers along a dimer row. Some candidate rearrangements after the dissociation of O-H bond on the Si(I 00)-2 x I surface are also described. (c) 2005 Elsevier B.V. All rights reserved.
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