Abstract:The sticking probability of ethanol $({\mathrm{C}}_{2}{\mathrm{H}}_{5}\mathrm{O}\mathrm{H})$ on a $\mathrm{Si}(111)\text{\ensuremath{-}}7\ifmmode\times\else\texttimes\fi{}7$ surface is entirely coverage independent, and the adsorption is suddenly stopped when three adatoms (half of the adatoms) are changed to $\mathrm{Si}\text{\ensuremath{-}}\mathrm{O}{\mathrm{C}}_{2}{\mathrm{H}}_{5}$ in every half unit cell. This $\mathrm{Si}(111)\text{\ensuremath{-}}7\ifmmode\times\else\texttimes\fi{}7$ surface saturated with ${\mathrm{C}}_{2}{\mathrm{H}}_{5}\mathrm{O}\mathrm{H}$, however, is active for the adsorption of NO. A more surprising fact is that the sticking probability of NO on this surface is equal to that on the virgin $\mathrm{Si}(111)\text{\ensuremath{-}}7\ifmmode\times\else\texttimes\fi{}7$ surface. That is, the sticking probability of ${\mathrm{C}}_{2}{\mathrm{H}}_{5}\mathrm{O}\mathrm{H}$ and NO on a $\mathrm{Si}(111)\text{\ensuremath{-}}7\ifmmode\times\else\texttimes\fi{}7$ surface has no influence of the coverage of Si-adatoms with $\mathrm{Si}\text{\ensuremath{-}}\mathrm{O}{\mathrm{C}}_{2}{\mathrm{H}}_{5}$. From these results, we deduced that the dissociation of NO and ${\mathrm{C}}_{2}{\mathrm{H}}_{5}\mathrm{O}\mathrm{H}$ takes place via the precursor state adsorption. The coverage of adatoms gives no effect on the sticking probability of NO and ${\mathrm{C}}_{2}{\mathrm{H}}_{5}\mathrm{O}\mathrm{H}$, the adsorption of NO on the faulted halves prefers that on unfaulted halves $(F∕U=2.2\ensuremath{\sim}2.4)$, although no such preference was observed in the adsorption of ${\mathrm{C}}_{2}{\mathrm{H}}_{5}\mathrm{O}\mathrm{H}$ $(F∕U=1)$. N and O atoms formed by the dissociation of NO migrate over the surface and are finally trapped by Si-adatoms. On the other hand, adsorption of ${\mathrm{C}}_{2}{\mathrm{H}}_{5}\mathrm{O}\mathrm{H}$ occurs by dissociating the precursor state molecule on an adatom-rest atom site, which is the final step of the adsorption. Therefore, the scanning tunneling microscopy image of ${\mathrm{C}}_{2}{\mathrm{H}}_{5}\mathrm{O}\mathrm{H}$ reflects the structure of the sites, while that of NO reflects the electron density of sites. The physical meaning of the sticking probability, preferential adsorption on the faulted or unfaulted halves, and site selectivity of the center to corner adatoms in a half unit cell are discussed.

Dissociation Mechanism of 2-Propanol on a Si(111)-(7x7) Surface Studied by Scanning Tunneling Microscopy.

Dissociation Mechanism of Methanol on Asi(111)−(7×7)surface Studied by Scanning Tunneling Microscopy

Adsorption Kinetics and Patterning of A Si(111)-7x7 Surface by Dissociation of Methanol

Possible Dissociative Adsorption Of Ch3oh And Ch3nh2 On Si(100)-2 X 1 Surface

The Dissociative Adsorption Of Unsaturated Alcohols On Si(111)-7x7

Adsorbate Lone-Pair-electron Stimulated Charge Transfer Between Surface Dangling Bonds: Methanol Chemisorption on Si(1 1 1)-7 × 7

Theoretical investigations on CH2=CH-CH2OH on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces

Dissociative Adsorption Of Ch3x (X = Br And Cl) On A Silicon(100) Surface Revisited By Density Functional Theory

Coverage dependence of the 1-propanol adsorption on the Si(001) surface and fragmentation dynamics

Theoretical investigations on CH2CH–CH2OH on the Si(100)-2×1 and Ge(100)-2×1 surfaces

Dissociative Adsorption of Methylsilane on the Si(100)-2 × 1 Surface

Dissociative Adsorption of Ph3 on the Si(111)-7 X 7 Surface: A Theoretical Investigation

Multiple Pathways for Dissociative Adsorption of SiCl4 on the Si(100)-c(4×2) Surface.

Site-selective Adsorption Ofc2h5ohand NO Depending on the Local Structure or Local Electron Density on The

Multiple Pathways of Dissociative Attachment: CH3Br on Si(100)-2×1.

Theoretical Investigation of the Ammonia Adsorption Process on Si(100)-2×1 Surface

Adsorption Of Ammonia On Si(100), (111) Surfaces - A Theoretical Approach

Wetting Behaviors of Methanol, Ethanol, and Propanol on Hydroxylated SiO 2 Substrate

Sublayer Si Atoms As Reactive Centers in the Chemisorption on Si(100): Adsorption Ofc2h2andc2h

Quantum Chemical Model Calculations of Adhesion and Dissociation Between Epoxy Resin and Si-Containing Molecules

Adsorption of Triplet<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>on Si(100): The Crucial Step in the Initial Oxidation of a Silicon Surface