Abstract:First-principles calculations based on density functional theory–generalized gradient approximation method have been performed on cesium adsorption on Si(001)(2×1) surface. The optimized geometries and adsorption energies have been obtained and the preferred binding sites have been determined for the coverage (Θ) of one monolayer and half a monolayer. At Θ=0.5 ML the most stable adsorption site is shown to be T3 site. At Θ=1 ML two Cs atoms are adsorbed at HH and T3 sites, respectively. It was found that the saturation coverage of Cs for the Si(001)(2×1)–Cs surface is one monolayer instead of half a monolayer. This finding supports the majority of experimental observations but does not support recent coaxial impact collision ion scattering spectroscopy investigations [Surf. Sci. 531, L340 (2003)] and He+ Rutherford backscattering spectroscopy studies [Phys. Rev. B 62, 4545 (2000)]. Mulliken charge and overlap population analysis showed that the Cs–Si bond is indeed ionic rather than polarized covalent as generally assumed for alkali metal (AM) on Si(001)(2×1) surface. Geometrical structure analysis seems to have limitations in determining the nature of AM-substrate bond. We also found that the silicon surface is metallic and semiconducting for the coverages of 0.5 and 1 ML, respectively.

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Theoretical studies of the structure of C 2H 2 adsorbed on Si(0 0 1)

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Size Effects for the Adsorption of Alkali Metal Atoms on the Si(001) Surface