Observation of Frequency Up-Conversion Gain in SIS Junctions at W Band

Y. Kozuki,Y. Uzawa,T. Kojima,W. Shan,T. Sakai
DOI: https://doi.org/10.1007/s10909-020-02470-x
2020-01-01
Journal of Low Temperature Physics
Abstract:We have developed a test setup to measure frequency up-conversion gain in superconductor–insulator–superconductor (SIS) junctions at W band (75–110 GHz). A conventional SIS mixer with Nb/AlO x /Nb tunnel junctions was used as a frequency up-converter. An up-converted signal is measured by a room-temperature down-converter system. We observed distinct intermediate frequency responses to signal inputs from a continuous microwave source. The measured single-sideband up-conversion gain in SIS junctions was clearly positive (> 0 dB) with input frequency less than 2 GHz, which was well-calibrated by using an input from the continuous-wave source.
What problem does this paper attempt to address?