Abstract:The miniaturization of metal–oxide–semiconductor field-effect transistors (MOSFETs) has been the driving force behind the development of integrated circuits over the past 60 years; however, owing to short channel effect, reducing the gate length of MOSFETs to sub-10 nm represents a fundamental challenge. Two-dimensional materials (2DMs) with atomic scale thicknesses and non-dangling bonds interface enable sub-10 nm scale length, making them suitable candidates for advanced tech nodes beyond sub-3 nm. Although the performance metrics of a single 2DMs transistor have equalled or surpassed those of silicon, leaving no doubt about the potential of 2DMs at the laboratory level, the way of moving 2DMs from ‘lab to fab’ remains unclear. In this Review, we analyse the similarities and differences between 2DMs MOSFETs and silicon MOSFETs in the integrated circuits engineering process; we present potential solutions for channel, contact and dielectric engineering using 2DM to address the scaling challenges faced by a silicon-based device at the advanced tech node. Finally, we summarize the challenges in translating the performance of individual 2DMs devices into large-scale integrated circuits, including large-scale and stable transfer technology, high-quality material synthesis with controllable layers. Once these technical issues are properly solved, 2DMs can take full advantage of their properties at a farther scaling. This Review systematically compares 2DMs and silicon metal–oxide–semiconductor field-effect transistors technologies in the integrated circuits engineering process and presents potential solutions for channel, contact and dielectric engineering using 2DM to address the scaling challenges faced by a silicon-based device at the advanced tech node.

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