Abstract:Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases at the so-called magic angle. Interestingly, the role of a substrate on the electronic properties of TBG has not been completely elucidated. Up to now, most of the theoretical works carried out in order to understand this effect have been done using continuum models. In this work, we have gone one step ahead and have studied heterostructures of TBG and hBN using an atomistic tight-binding model together with semi-classical molecular dynamics to take into account relaxation effects. We found that the presence of the hBN substrate has significant effects to the band structure of TBG even in the case where TBG and hBN are not aligned. Specifically, the substrate induces a large mass gap and strong pseudomagnetic fields which break the layer degeneracy. Interestingly, such degeneracy can be recovered with a second hBN layer. Finally, we have also developed a continuum model that describes the tight-binding band structure. Our results show that a real-space tight-binding model in combination with semi-classical molecular dynamics are a powerful tool to study the electronic properties of supermoir\'e systems and that using this real-space methodology could be key in order to explain certain experimental results in which the effect of the substrate plays an important role.

Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices.

Magnitude of the Current in 2D Interlayer Tunneling Devices

Interband Tunneling Near The Merging Transition Of Dirac Cones

Characteristics of Interlayer Tunneling Field-Effect Transistors Computed by a “Dft-Bardeen” Method

Tunneling properties of vertical heterostructures of multilayer hexagonal boron nitride and graphene

Ultimate sharpness of the tunneling resonance in vertical heterostructures

Modeling of inter-ribbon tunneling in graphene

Tunnel Magnetoresistance with Atomically Thin Two-Dimensional Hexagonal Boron Nitride Barriers

Modeling Klein Tunneling and Caustics of Electron Waves in Graphene

Interband Tunneling in 2D Crystal Semiconductors

Current-in-plane Tunneling Measurement of Oxygen-functionalized Few-layer Boron Nitride Lateral Barriers

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Atomically thin boron nitride: a tunnelling barrier for graphene devices

Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures

Tunneling conductance of hybrid bilayer-single graphene junctions

Tunneling States In Graphene Heterostructures Consisting Of Two Different Graphene Superlattices

Exotic Tunneling Resistance in Graphene/topological Insulator Vertical Junction

Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy

Tunneling Spectroscopy of Graphene-Boron Nitride Heterostructures

Subgap current in superconducting tunnel junctions with diffusive electrodes

Thermoelectric Transport in Graphene/$h$-BN/Graphene Heterostructures: A Computational Study