Maarten L. Van de Put,William G. Vandenberghe,Bart Sorée,Wim Magnus,Massimo Fischetti
Abstract:The tunneling current between two crossed graphene ribbons is described invoking the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method. Results indicate that the density of states is the most important factor determining the tunneling current between small (nm) ribbons. The quasi-one dimensional nature of graphene nanoribbons is shown to result in resonant tunneling.
What problem does this paper attempt to address?
This paper aims to solve the problem of modeling the cross - tunneling effect between graphene nanoribbons. Specifically, the author attempts to study the tunneling current characteristics between two cross - arranged graphene nanoribbons through theoretical and computational methods.
### Main problems:
1. **Description of tunneling current**: How to accurately describe the tunneling current between two cross - arranged graphene nanoribbons? The author uses the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method to describe this process.
2. **Influence of density of states**: The density of states (DoS) plays a crucial role in determining the tunneling current between small - sized (about several nanometers) graphene nanoribbons. The author pays special attention to the influence of one - dimensional properties on the resonant tunneling effect.
3. **Influence of different edge structures**: The difference in tunneling current between graphene nanoribbons with armchair and zigzag edge structures is studied, especially the influence of their different band structures and density of states on the tunneling current.
### Specific problems and solutions:
- **Choice of calculation method**: In order to calculate the electronic states, the author adopts a local plane - wave empirical pseudopotential eigenvalue solver, which can handle structures containing hundreds of atoms. The Schrödinger equation is solved by real - space techniques and combined with the fast Fourier transform (FFT) to reduce the computational complexity.
- **Calculation of tunneling current**: The Bardeen transfer Hamiltonian method is used to calculate the tunneling current. The formula is as follows:
\[
I=\frac{2\pi e}{\hbar}\sum_{n,n'}\int dk\int dk'\left|T_{nn'}(k,k')\right|^{2}\left[f(E_{n}(k)-\mu_{A})-f(E_{n'}(k')-\mu_{B})\right]\delta(E_{n}(k)-E_{n'}(k')-V_{ds})
\]
where \(T_{nn'}(k,k')\) is the kinetic - energy matrix element between state \(|n,k\rangle\) of layer A and state \(|n',k'\rangle\) of layer B, \(E_{n}(k)\) and \(E_{n'}(k')\) are the corresponding eigen - energies respectively, \(\mu_{A}\) and \(\mu_{B}\) are the chemical potentials, and \(V_{ds}\) is the applied bias voltage.
### Research results:
- **Armchair - type nanoribbons**: Due to the existence of a band gap, the armchair - type nanoribbons have almost no current under a small bias voltage. When the bias voltage is equal to the band gap, the current increases sharply.
- **Zigzag - type nanoribbons**: Due to the absence of a band gap, the zigzag - type nanoribbons show an exponential growth of current under a small bias voltage, exhibiting a "sub - threshold" region.
- **Resonant tunneling effect**: By adjusting the position of the Fermi level, the author demonstrates the resonant tunneling effect and observes obvious resonance peaks.
In general, through detailed theoretical calculations and model analysis, this paper reveals the physical mechanism of the tunneling current between graphene nanoribbons, especially the differences under different edge structures and their influence on current characteristics.