Abstract:Abstract With the development of integrated circuit technology, especially after entering the sub-micron process, the reduction of critical dimensions and the realization of high-density devices, the flatness between integrated circuit material layers is becoming more and more critical. Because conventional mechanical polishing methods inevitably produce scratches of the same size as the device in metal or even dielectric layers, resulting in depth of field and focus problems in lithography. The first planarization technique to achieve application is spin on glass (SOG) technology. However, this technology will not only introduce new material layers, but will also fail to achieve the global flattening required by VLSI and ULSI technologies. Moreover, the process instability and uniformity during spin coating do not meet the high flatness requirements of the wafer surface. Also, while some techniques such as reverse etching and glass reflow can achieve submicron level regional planarization. After the critical dimension reaches 0.35 microns (sub-micron process), the above methods cannot meet the requirements of lithography and interconnect fabrication. In the 1980s, IBM first introduced the chemical mechanical polishing (CMP) technology used to manufacture precision optical instruments into its DRAM manufacturing [1]. With the development of technology nodes and critical dimensions, CMP technology has been widely used in the Front End Of Line (FEOL) and Back End Of Line (BEOL) processes [2]. Since the invention of chemical mechanical polishing, scientists have not stopped studying its internal mechanism. From the earliest Preston Formula (1927) to today’s wafer scale, chip scale, polishing pad contact, polishing pad - abrasive - wafer contact and material removal models, there are five different scale models from macro to the micro [3]. Many research methods, such as contact mechanics, multiphase flow kinetics, chemical reaction kinetics, molecular dynamics, etc., have been applied to explain the principles of chemical mechanical polishing to establish models. This paper mainly introduces and summarizes the different models of chemical mechanical polishing technology. The various application scenarios and advantages and dis-advantages of the model are discussed, and the development of modeling technology is introduced.

Von Mises Stress in Chemical‐Mechanical Polishing Processes

Effects of Film Stress on the Chemical Mechanical Polishing Process

Contact Stress Non-Uniformity of Wafer Surface for Multi-Zone Chemical Mechanical Polishing Process

Modeling Chemical Mechanical Polishing with Couple Stress Fluids

Tribology Analysis of Chemical‐Mechanical Polishing

Numerical Analysis in Double-Sided Polishing: Mechanism Exploration of Edge Roll-Off

Energy dissipation and constitutive modeling for a mechanistic description of pad scratching in chemical–mechanical planarization

Simulation of CMP Properties with Couple Stress

Numerical and Experimental Investigation on Multi-Zone Chemical Mechanical Planarization

Prediction of Pad Wear Profile and Simulation of Its Influence on Wafer Polishing

A model for chemical–mechanical polishing of a material surface based on contact mechanics

A chemical mechanical polishing model incorporating both the chemical and mechanical effects

Wear phenomena in chemical mechanical polishing

Chemical mechanical polishing: Theory and experiment

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Study of Local Stress Using Stress-Absorbing Si Diaphragm

A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

Analysis on Contact and Flow Features in CMP Process

Review on modeling and application of chemical mechanical polishing

Mechanism of Mid-Spatial-frequency Waviness Removal by Viscoelastic Polishing Tool

A Model for Mechanical Wear and Abrasive Particle Adhesion during the Chemical Mechanical Polishing Process