The Study of the Silicon Dioxide Anti-Reflection Film Prepared by the Sol-Gel Method

Jianfeng Li,Tatirna Seegevna Ivanova,Hongyuan Fan,Dezhen Wang
DOI: https://doi.org/10.1142/9789814696029_0045
2016-01-01
Abstract:The tetraethyl orthosilicate (TEOS) as raw materials, the ethanol, the water and others as solvents, the SiO2 thin film by the sol - gel method is prepared. Through different processes between the czochralski and the spin coating, the x-ray diffraction (the prepared flims are characterized by XRD techniques to study their structure and morphology and spectrophoto metric properties), scanning electron microscopy (the prepared flims are characterized by SEM techniques to study their structure and morphology and spectrophoto metric properties) and spectrophotometer are taken as test instruments to analyze the structure, surface morphology and spectrum characteristic of the film. By comparing different process, the results show that: the average size of the SiO2 film is in the nanometer range, with the amorphous disordered structure. The optimum parameters is: the Tetra ethylor thsilicate (TEOS): the ethanol: the glycol ether: the isopropanol: the deionized water (molar ratio) = 1:1.25:1.6:0.98:1.5, and the ammonia as the catalyst, with the czochralski method. The transmittance of the SiO2 films obtained increases nearly 3%.
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